ADM-8622PSM_DC - 10 GHz High Dynamic Range Gain Block

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8622PSM	DC - 10 GHz High Dynamic Range Gain Block	DFN	REACH RoHS	Released	EAR99
EVB-ADM-8622P	Evaluation Board, DC - 10 GHz High Dynamic Range Gain Block Amplifier	EVB	REACH RoHS	Released	EAR99

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8622PSM	DC - 10 GHz High Dynamic Range Gain Block	DFN	REACH RoHS	Released	EAR99
EVB-ADM-8622P	Evaluation Board, DC - 10 GHz High Dynamic Range Gain Block Amplifier	EVB	REACH RoHS	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2023-06-01	Initial Datasheet Release
A	2025-03-04	Corrected Application Circuit Voltage
B	2025-05-07	Updated Abs Max Drain Voltage from 4V to 7V

Port Configuration and Functions

Port Diagram

Diagram of the port configuration for ADM-8622PSM

Port Functions

Port	Function	Description	DC Equivalent Circuit
Paddle	Gnd	Package ground paddle must be connected to a DC/RF ground potential with high thermal and electrical conductivity.	-
Pin 1	Vref	Pin 1 provides a voltage reference to bias Pin 2. Pin 1 and pin 2 must be DC coupled but RF isolated by a choke. For proper operation, DO NOT ground this pin nor leave it floating . See application section for more details.	-
Pin 2	RF Input	Pin 2 is the RF Input port of the amplifier. It is internally RF matched to 50 Ω and requires an external DC blocking cap. Pin 2 must be DC coupled to Pin 1 voltage reference through an RF choke for biasing.	-
Pin 3	ACG	Pin 3 should be AC grounded using a series RC network. See application section for details. DO NOT DC GROUND THIS PIN.	-
Pin 4,6	NC	Pin 4 and Pin 6 are internally no-connects and should be connected to DC/RF ground.	-
Pin 5	RF Out / Vd	Pin 5 is the RF Output port and is also the Vd port providing the main power supply to the amplifier. This pin is DC coupled and requires an external bias-T or discrete choke and DC blocking capacitor. This port is RF matched to 50 Ω. DC voltage at this pin should be set to 3.3V for normal operation.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Drain Bias Current (Idq)	60	mA
Drain Supply Voltage (Vd)	7	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Max Junction Temperature for MTTF of >1E6 hours	175	°C
Max Power Dissipation for MTTF of > 1E6 hours	0.72	W
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-65	°C
Reference Bias Current (Iref)	15	mA
Reference Bias Voltage (Vref)	2	V
RF Input Power	20	dBm
θ_Jc, Junction to Case Thermal Resistance	50	ºC/W

Package Information

Parameter	Details	Rating
Weight	Package name: DFN	0.007g
Dimensions	-	2.0 x 1.3 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ta Ambient Temperature	-40	25	85	°C
Power Supply DC Voltage (Vd)	-	3.3	-	V
Power Supply DC Current (Idq) (No RF Input)	-	40	-	mA
Input Power for Saturation	-	5	-	dBm

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C and Vd = 3.3 V.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd = 3.3 V no RF input	-	-	-	40	-	mA
Input IP2	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	14	-	dBm
Input IP3	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	11	-	dBm
Input Power for Saturation	Vd = 3.3 V Idq = 40mA	0	10	-	5	-	dBm
Input Return Loss	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	16	-	dB
Noise Figure	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0.21	10	-	2	-	dB
Output IP2	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	29	-	dBm
Output IP3	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	26	-	dBm
Output P1dB	Vd = 3.3 V Idq = 40mA	0	10	-	13.5	-	dBm
Output Return Loss	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	24	-	dB
Reverse Isolation	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	19	-	dB
Saturated Output Power	Vd = 3.3 V Idq = 40mA	0	10	-	15	-	dBm
Small Signal Gain	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	15.5	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd = 3.3 V no RF input	-	-	-	40	-	mA
Input IP2	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	14	-	dBm
Input IP3	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	11	-	dBm
Input Power for Saturation	Vd = 3.3 V Idq = 40mA	0	10	-	5	-	dBm
Input Return Loss	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	16	-	dB
Noise Figure	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0.21	10	-	2	-	dB
Output IP2	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	29	-	dBm
Output IP3	Vd = 3.3 V Idq = 40mA Pin = -18 dBm per tone, 1 MHz tone spacing	0	10	-	26	-	dBm
Output P1dB	Vd = 3.3 V Idq = 40mA	0	10	-	13.5	-	dBm
Output Return Loss	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	24	-	dB
Reverse Isolation	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	19	-	dB
Saturated Output Power	Vd = 3.3 V Idq = 40mA	0	10	-	15	-	dBm
Small Signal Gain	Vd = 3.3 V Idq = 40mA Pin = -20 dBm	0	10	-	15.5	-	dB