Port Diagram
A port diagram of the APM-7099CH is shown below.
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Device Overview
General Description
The APM-7099 is a broadband distributed, low phase noise driver amplifier designed to provide a saturated +25 dBm output power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to drive our NLTL multiplier line. It can also provides sufficient power to drive the LO port of an S-diode mixer from 10 MHz to 15 GHz or of an H or L diode mixer from 10 MHz to 20 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
Features
- -167 dBc/Hz phase noise at 10 kHz offset frequency
- +25 dBm output power
- Low DC power consumption
- Positive-only biasing
- No sequencing required
- Unconditionally stable
Applications
- Mobile test and measurement equipment
- Radar
- SATCOM
- 5G Transceivers
- NLTL Driver
- Suitable as a T3 drive
- Driver amplifier L,H,S – diode mixers
Functional Block Diagram
Part Ordering Options
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|---|
| APM-7099PA | 0.01GHz – 20 GHz Low Phase Noise Amplifier | PA | Standard | REACH RoHS | Released | EAR99 |
| APM-7099CH | 0.01GHz – 20 GHz Low Phase Noise Amplifier | CH | - | REACH RoHS | Released | EAR99 |
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|---|
| APM-7099PA | 0.01GHz – 20 GHz Low Phase Noise Amplifier | PA | Standard | REACH RoHS | Released | EAR99 |
| APM-7099CH | 0.01GHz – 20 GHz Low Phase Noise Amplifier | CH | - | REACH RoHS | Released | EAR99 |
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Table Of Contents
- Device Overview
- Port Configuration and Functions
- Revision History
- Specifications
- Operation
- Mechanical Data
Revision History
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2020-10-01 | Datasheet Initial Release |
| A | 2021-03-01 | Updated maximum input power and min specs |
| B | 2021-06-01 | Updated Saturated Output Power Min Spec Bandwidth |
| C | 2021-08-01 | Updated Thermal Resistance |
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Port Configuration and Functions
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Port Functions
| Port | Function | Description | DC Equivalent Circuit |
|---|---|---|---|
| CAP1 | Off-Chip Cap Port 1 | CAP1 is a pad that allows the user to attach additional off chip bypass capacitance to the VC supply line. A 0.1µF capacitor is recommended |  |
| CAP2 | Off-Chip Cap Port 2 | CAP2 is a pad that allows the user to attach additional off chip bypass capacitance to provide adequate AC grounding termination. A 0.1µF capacitor is recommended |  |
| GND | Ground | Backside of the IC must be connected to a DC/RF ground with high thermal and electrical conductivity. |  |
| RF In | RF Input | This is the RF Input port of the amplifier die. It is RF matched to 50 Ω, and is DC coupled. RF input pad is GSG with 175 µm pitch. |  |
| RF Out/VC | RF Output and Collector Supply Port | This is the amplifier die’s RF Output and positive VC supply voltage port. It is RF matched to 50 Ω and is DC coupled. RF output pad is GSG with 175 µm pitch. Must have less than 7:1 VSWR when operating with voltage larger 8V on VC |  |
| VB | Current Mirror Bias Port | Port VB is the DC voltage bias pad for the current mirror that control the collector current supplied to the amplifier. Larger voltages result in a higher current draw through port RF Out/VC, effectively functioning as a gain control pin of the amplifier. See Typical Performance Plots for performance at different bias conditions. |  |
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Specifications
Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Collector Positive Bias Voltage (Vc) | 9 | V |
| Maximum Operating Temperature | 85 | °C |
| Maximum Storage Temperature | 150 | °C |
| Max Junction Temperature for MTTF > 1E6 Hours | 125 | °C |
| Max Power Dissipation for MTTF of 1E6 hours at 85˚C Baseplate Temperature | 709 | mW |
| Minimum Operating Temperature | -40 | °C |
| Minimum Storage Temperature | -65 | °C |
| Output Load VSWR | 7 | - |
| Positive Bias Current (Ic) | 225 | mA |
| Positive DC Current Mirror Voltage (Vb) | 9 | V |
| RF Input Power (10 MHz – 3GHz) | 12 | dBm |
| RF Input Power (3 GHz – 20 GHz) | 15 | dBm |
| θJC, Junction to Case Thermal Resistance | 38 | ºC/W |
Package Information
| Parameter | Details | Rating |
|---|---|---|
| Dimensions | - | 2.28 x 1.40 mm |
Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Ic should be modified by changing bias voltage VB to maintain junction temperature within MTTF target for given operating conditions.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Ambient Temperature | -40 | 25 | 85 | °C |
| Power Supply DC Voltage (VC) | 5 | 8 | 9 | V |
| Power Supply DC Current (Ic) (No RF Input) 1 | 38 | 72 | 132 | mA |
| Power Supply DC Current (with RF Input) 2 | - | - | 180 | mA |
[1] Ic should be modified by changing bias voltage VB to maintain junction temperature within MTTF target for given operating conditions. Recommended operating current conditions without RF input applied. Please see typical performance plots on page 12 for relationship between RF input power and DC current draw.
[2] Operation above recommended max power supply DC current will result in reduced MTTF.
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 8V/6V | - | - | - | 53 | - | mA |
| Current Consumption 2 | 8V/7V | - | - | - | 72 | - | mA |
| Current Consumption 3 | 8V/8V | - | - | - | 96 | - | mA |
| Current Mirror, Ib | 8V/6V | - | - | - | 3.4 | - | mA |
| Current Mirror, Ib | 8V/7V | - | - | - | 4.2 | - | mA |
| Current Mirror, Ib | 8V/8V | - | - | - | 5 | - | mA |
| Input IP3 | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 12 | - | dBm |
| Input Power for Saturation | 8V/7V bias | 0.01 | 20 | - | 12 | - | dBm |
| Input Return Loss | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 14 | - | dB |
| Noise Figure | -30 dBm Input Power | 0.01 | 20 | - | 5 | - | dB |
| Output IP3 | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 24 | - | dBm |
| Output P1dB | 8V/7V bias | 0.01 | 20 | - | 23 | - | dBm |
| Output Return Loss | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 20 | - | dB |
| Phase Noise @ 10 kHz Offset | +12 dBm Input power | 1 | 1 | - | -167 | - | dBc/Hz |
| Reverse Isolation | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 36 | - | dB |
| Saturated Output Power 4 | 8V/7V bias | 0.01 | 0.1 | - | 20 | - | dBm |
| Saturated Output Power 5 | 8V/7V bias | 0.1 | 15 | 19 | 25 | - | dBm |
| Saturated Output Power 6 | 8V/7V bias | 15 | 20 | - | 23 | - | dBm |
| Small Signal Gain | 8V/7V bias, -15 dBm Input Power | 15 | 20 | - | 12 | - | dB |
| Small Signal Gain | 8V/7V bias, -15 dBm Input Power | 0.01 | 15 | 10 | 14 | - | dB |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 8V/6V | - | - | - | 53 | - | mA |
| Current Consumption 2 | 8V/7V | - | - | - | 72 | - | mA |
| Current Consumption 3 | 8V/8V | - | - | - | 96 | - | mA |
| Current Mirror, Ib | 8V/6V | - | - | - | 3.4 | - | mA |
| Current Mirror, Ib | 8V/7V | - | - | - | 4.2 | - | mA |
| Current Mirror, Ib | 8V/8V | - | - | - | 5 | - | mA |
| Input IP3 | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 12 | - | dBm |
| Input Power for Saturation | 8V/7V bias | 0.01 | 20 | - | 12 | - | dBm |
| Input Return Loss | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 14 | - | dB |
| Noise Figure | -30 dBm Input Power | 0.01 | 20 | - | 5 | - | dB |
| Output IP3 | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 24 | - | dBm |
| Output P1dB | 8V/7V bias | 0.01 | 20 | - | 23 | - | dBm |
| Output Return Loss | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 20 | - | dB |
| Phase Noise @ 10 kHz Offset | +12 dBm Input power | 1 | 1 | - | -167 | - | dBc/Hz |
| Reverse Isolation | 8V/7V bias, -15 dBm Input Power | 0.01 | 20 | - | 36 | - | dB |
| Saturated Output Power 4 | 8V/7V bias | 0.01 | 0.1 | - | 20 | - | dBm |
| Saturated Output Power 5 | 8V/7V bias | 0.1 | 15 | 19 | 25 | - | dBm |
| Saturated Output Power 6 | 8V/7V bias | 15 | 20 | - | 23 | - | dBm |
| Small Signal Gain | 8V/7V bias, -15 dBm Input Power | 15 | 20 | - | 12 | - | dB |
| Small Signal Gain | 8V/7V bias, -15 dBm Input Power | 0.01 | 15 | 10 | 14 | - | dB |
[1][2][3] Bias conditions for Ic and Ib tested with no RF input power. See Typical Performance Plots for DC current vs. RF power. Bias conditions presented as VC/VB.
[4][5][6] Saturated Output Power specification defined using the APM-7099PA P3dB compression curve shown in Typical Performance Plots.
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Typical Performance Plots
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099PA - Typical Performance Plots
Operation above Max Ic Limit = 180mA, will result in reduced MTTF
Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099PA - Typical Performance Plots of Marki MT3H-0113H with APM 7099PA LO Driver
LO Input Powers specified as the input power into the APM-7099PA LO driver
Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
APM-7099PA - Time Domain Plots
Fast rise time is desirable for linear T3 mixer operation.
Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
Application Circuit
APM-7099CH
0.01GHz – 20 GHz Low Phase Noise Amplifier
