APM-7099SM_0.01-20 GHz Surface Mount Low Phase Noise Amplifier

Part Number	Description	Package	Packing Size	Green Status	Product Lifecycle	Export Classification
APM-7099SM	0.01-20 GHz Surface Mount Low Phase Noise Amplifier	QFN	-	REACH RoHS	Released	EAR99
EVAL-APM-7099SM	Evaluation Board, 0.01-20 GHz Surface Mount Low Phase Noise Amplifier	EVAL	-	REACH RoHS	Released	EAR99
APM-7099SM-TR	Tape and Reel, 0.01-20 GHz Surface Mount Low Phase Noise Amplifier	QFN	7"	REACH RoHS	Released	EAR99

Part Number	Description	Package	Packing Size	Green Status	Product Lifecycle	Export Classification
APM-7099SM	0.01-20 GHz Surface Mount Low Phase Noise Amplifier	QFN	-	REACH RoHS	Released	EAR99
EVAL-APM-7099SM	Evaluation Board, 0.01-20 GHz Surface Mount Low Phase Noise Amplifier	EVAL	-	REACH RoHS	Released	EAR99
APM-7099SM-TR	Tape and Reel, 0.01-20 GHz Surface Mount Low Phase Noise Amplifier	QFN	7"	REACH RoHS	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2020-10-01	Datasheet Initial Release
A	2021-02-01	Updated Thermal Specs, Absolute Max Table, and Min Specs
B	2021-07-01	Updated Saturated Output Power Min Spec bandwidth
C	2023-03-01	Updated Application Circuit

Port Configuration and Functions

Port Diagram

A port diagram of the APM-7099SM is shown below.

Diagram of the port configuration for APM-7099SM

Port Functions

Port	Function	Description
10	Off-Chip Cap Port 2	Port 10 allows the user to attach additional off chip bypass capacitance to provide adequate low frequency AC grounding termination to the input matching network. The value should be at least 100nF.
12	Current Mirror Bias Port	Port 12 is the DC voltage bias pad for the current mirror that controls the collector current supplied to the amplifier. See APM-7099SM Typical Performance Plots for performance at different bias conditions.
15	RF Output and Collector Supply Port	This is the amplifier’s RF Output and positive VC supply voltage pin. It is RF matched to 50 Ω and is DC coupled. Must have less than 7:1 VSWR when operating.
23	Off-Chip Cap Port 1	Port 23 allows the user to attach additional off chip bypass capacitance to provide adequate low frequency AC grounding termination to the input matching network. The value should be at least 100nF.
5	RF Input	This is the RF input port of the device, and is RF matched to 50 Ω. This port is DC-coupled, and requires a blocking capacitor.
GND	Ground	IC backside must be connected to a DC/RF ground with high thermal and electrical conductivity.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime.

Parameter	Maximum Rating	Unit
Bias (Current Mirror) Voltage (VB)	9	V
Maximum Operating Temperature	85	°C
Maximum Storage Temperature	150	°C
Max Junction Temperature for MTTF> 1E6 hours	125	°C
Max Power Dissipation for MTTF of 1E6 hours at 85˚C Baseplate Temperature	709	mW
Minimum Operating Temperature	-40	°C
Minimum Storage Temperature	-65	°C
Output Load VSWR	7	-
Power Supply (Collector) Current (Ic)	225	mA
Power Supply (Collector) Voltage (VC)	9	V
RF Input Power (10 MHz – 3GHz)	12	dBm
RF Input Power (3 GHz – 20 GHz)	15	dBm
θJC, Junction to Case Thermal Resistance	56	ºC/W

Package Information

Parameter	Details	Rating
Dimensions	-	4 x 4 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ambient Temperature	-40	25	85	°C
Positive DC Voltage (VC)	5	8	9	V
Quiescent DC Current (Ic)	38	72	132	mA
DC Current with RF Input (Ic)	-	-	225	mA
Positive DC Current Mirror Voltage (VB)	5	7	9	V
Input Power for Saturation	10	11	12	dBm

Maximum recommended operating current conditions without RF input applied. Please see typical performance plots for relationship between RF input power and DC current draw.

Electrical Specifications

The electrical specifications apply at TA=+25 °C in a 50 Ω system. QFNs are 100% RF tested.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption ¹	8 V/6 V	-	-	-	53	-	mA
Current Consumption ²	8 V/7 V	-	-	-	72	-	mA
Current Mirror, Ib	8 V/6 V	-	-	-	3.4	-	mA
Current Mirror, Ib	8 V/7 V	-	-	-	4.2	-	mA
Input IP3	8 V/7 V bias, -12 dBm Input Power	0.01	20	-	13	-	dBm
Input Power for Saturation	8 V/7 V bias	0.01	20	-	12	-	dBm
Input Return Loss	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	8	-	dB
Noise Figure	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	6	-	dB
Output IP3	8 V/7 V bias, -12 dBm Input Power	0.01	20	-	27	-	dBm
Output P1dB	8 V/7 V bias	0.01	20	-	21	-	dBm
Output Return Loss	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	12	-	dB
Phase Noise @ 10 kHz Offset	+13 dBm Input power	1	1	-	-167	-	dBc/Hz
Reverse Isolation	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	28	-	dB
Saturated Output Power ³	8V/7V bias, P7dB	0.01	0.1	-	20	-	dBm
Saturated Output Power ⁴	8V/7V bias, P7dB	0.1	15	19	25	-	dBm
Saturated Output Power ⁵	8V/7V bias, P7dB	15	20	-	23	-	dBm
Small Signal Gain	8 V/7 V bias, -20 dBm Input Power	0.01	15	10	14	-	dB
Small Signal Gain	8 V/7 V bias, -20 dBm Input Power	15	20	-	12	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption ¹	8 V/6 V	-	-	-	53	-	mA
Current Consumption ²	8 V/7 V	-	-	-	72	-	mA
Current Mirror, Ib	8 V/6 V	-	-	-	3.4	-	mA
Current Mirror, Ib	8 V/7 V	-	-	-	4.2	-	mA
Input IP3	8 V/7 V bias, -12 dBm Input Power	0.01	20	-	13	-	dBm
Input Power for Saturation	8 V/7 V bias	0.01	20	-	12	-	dBm
Input Return Loss	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	8	-	dB
Noise Figure	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	6	-	dB
Output IP3	8 V/7 V bias, -12 dBm Input Power	0.01	20	-	27	-	dBm
Output P1dB	8 V/7 V bias	0.01	20	-	21	-	dBm
Output Return Loss	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	12	-	dB
Phase Noise @ 10 kHz Offset	+13 dBm Input power	1	1	-	-167	-	dBc/Hz
Reverse Isolation	8 V/7 V bias, -20 dBm Input Power	0.01	20	-	28	-	dB
Saturated Output Power ³	8V/7V bias, P7dB	0.01	0.1	-	20	-	dBm
Saturated Output Power ⁴	8V/7V bias, P7dB	0.1	15	19	25	-	dBm
Saturated Output Power ⁵	8V/7V bias, P7dB	15	20	-	23	-	dBm
Small Signal Gain	8 V/7 V bias, -20 dBm Input Power	0.01	15	10	14	-	dB
Small Signal Gain	8 V/7 V bias, -20 dBm Input Power	15	20	-	12	-	dB

^[1]^[2] Bias conditions for Ic and Ib tested with no RF input power. See APM-7099SM Typical Performance Plots for DC current vs. RF power. Bias conditions presented as VC/VB.

^[3]^[4]^[5] Saturated output power specification defined using the EVAL-APM-7099SM P7dB compression curve shown in APM-7099SM Typical Performance Plots.