OBSOLETE

Device Overview

General Description

The APM-6848SM is an integrated 2-stage broadband, low phase noise LO driver amplifier designed to provide a saturated +20 dBm output power from a 0-4 dBm input power with low DC power consumption, packaged in a 4mm QFN. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of an S-diode mixer from 2 GHz to 20 GHz or an H or L diode mixer from 2 GHz to 32 GHz. This amplifier can be operated with a variety of bias conditions including VC=VB=5V for both low power and high power applications.

Photo of APM-6848SM

Features

  • -165 dBc/Hz phase noise at 10 kHz offset frequency
  • Power and gain control
  • +22 dB gain
  • Low DC power consumption
  • Positive-only biasing
  • No sequencing required
  • Unconditionally stable
  • Integrated DC blocks – No bias-tees or off-chip blocking required

Applications

  • Mobile test and measurement equipment
  • Radar
  • SATCOM
  • 5G transceivers
  • Driver amplifier for S, H, and L – diode mixers
  • Suitable as a T3 mixer driver

Functional Block Diagram

Block Diagram

Part Ordering Options

Part NumberDescriptionPackageGreen StatusProduct LifecycleExport Classification
APM-6848SM2-30 GHz Surface Mount Low Phase Noise AmplifierQFN

REACH

RoHS

ObsoleteEAR99
EVAL-APM-6848SMEvaluation Board, 2-30 GHz Surface Mount Low Phase Noise AmplifierEVAL

REACH

RoHS

ObsoleteEAR99

Table Of Contents

Revision History

Revision CodeRevision DateComment
-2019-12-01Datasheet Initial Release
A2020-05-01Updated EVAL drawing and status
B2020-07-01Updated Min small signal gain spec
C2020-07-01Updated Max Operating Temperature
D2020-11-01Updated Thermal Specs and Min Specs, added link to landing pattern
E2020-12-01Adjusted performance plots to adhere to Max input power spec.

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Port Configuration and Functions

Port Diagram

A top-down port diagram of the APM-6848SM is shown below.

Diagram of the port configuration for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Port Functions

PortFunctionDescriptionDC Equivalent
Circuit
11RF Output This is the RF Output port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. Must have less than 7:1 VSWR when operating with voltage larger than 5V on VC1 or VC2. Equivalent circuit for the RF Output
14Collector Supply Port 2 Pad VC2 is the DC voltage supply pad to the 2nd stage of the amplifier IC. Larger VC voltage will result in larger power consumption and larger power output. See typical performance plots for performance at different bias conditions.Equivalent circuit for the Collector Supply Port 2
17Collector Supply Port 1 Pad VC1 is the DC voltage supply pad for the 1st stage of the amplifier IC. See Typical performance plots for performance at different bias conditions.Equivalent circuit for the Collector Supply Port 1
2Base Supply Port 1 Pad VB1 is the DC voltage supply pad for a current mirror which controls the collector current of the 1st stage (Ic1). Larger voltages result in a higher current draw through pad VC1, effectively functioning as a gain control pin for the 1st stage of the amplifier. See typical performance plots for performance at different bias conditions. Equivalent circuit for the Base Supply Port 1
21RF Input This is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω.Equivalent circuit for the RF Input
4Base Supply Port 2 Pad VB2 is the DC voltage supply pad for a current mirror which controls the collector current of the 2nd stage (Ic2). Larger voltages result in a higher current draw through pad VC2, effectively functioning as a gain control pin for the 2nd stage of the amplifier. See typical performance plots for performance at different bias conditions. Equivalent circuit for the Base Supply Port 2
GNDGround Backside of the IC must be connected to a DC/RF ground with high thermal and electrical conductivity.Equivalent circuit for the Ground

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime.

ParameterMaximum RatingUnit
Collector Positive Bias Voltage (VC, VC1, VC2) 7V
Current Mirror Positive Bias Current (Ib, Ib1+Ib2) 8mA
Current Mirror Positive Bias Voltage (VB, VB1, VB2) 7V
Maximum Operating Temperature 85°C
Maximum Storage Temperature 150°C
Max Junction Temperature for MTTF > 1E6 Hours 125°C
Minimum Operating Temperature -40°C
Minimum Storage Temperature -65°C
Output Load VSWR 7-
Positive Bias Current (Ic1) 190mA
Positive Bias Current (Ic2) 90mA
RF Input Power 5dBm
θJC 53ºC/W

[1] Maximum positive DC collector current into each collector biasing pin.

Package Information

ParameterDetailsRating
Dimensions-4 x 4 mm
Moisture Sensitivity Level-MSL 1

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

ParameterMinNominalMaxUnit
Ambient Temperature -402585°C
Positive DC Voltage (VC1) 356V
Positive DC Current (Ic1) 82140mA
Positive DC Voltage (VC2) 356V
Positive DC Current (Ic2) 82140mA
Positive DC Current Mirror Voltage (VB1) 356V
Positive DC Current Mirror Current (Ib1) 0.922.6mA
Positive DC Current Mirror Voltage (VB2) 356V
Positive DC Current Mirror Voltage (Ib2) 0.922.6mA

Maximum recommended operating current conditions without RF input applied. Please see typical performance plots for relationship between RF input power and DC current draw.

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. All Specifications and performance shown with VC1 = VC2 and VB1 = VB2

ParameterTest ConditionsMinimum
Frequency
(GHz)
Maximum
Frequency
(GHz)
MinTypMaxUnit
Current Consumption 15V/4V
- --27-mA
Current Consumption 25V/5V
- --43-mA
Current Consumption 35V/6V
- --67-mA
Current Mirror, Ib 5V/4V
- --2.9-mA
Current Mirror, Ib 5V/5V
- --4-mA
Current Mirror, Ib 5V/6V
- --5.2-mA
Frequency -- -2-30GHz
Input IP3 5V/5V bias, -25 dBm Input Power
2 29--2-dBm
Input Power for Saturation 5V/5V bias
2 29-4-dBm
Input Return Loss 5V/5V bias, -25 dBm Input Power
2 20-14-dB
Input Return Loss 5V/5V bias, -25 dBm Input Power
20 29-7-dB
Noise Figure 5V/5V bias, -25 dBm Input Power
2 26.5-6-dB
Output IP3 5V/5V bias, -25 dBm Input Power
2 29-20-dBm
Output P1dB 5V/5V bias
2 20-19-dBm
Output P1dB 5V/5V bias
20 29-15-dBm
Output Return Loss 5V/5V bias, -25 dBm Input Power
20 29-11-dB
Output Return Loss 5V/5V bias, -25 dBm Input Power
2 20-16-dB
Phase Noise @ 10 kHz Offset 5V/5V bias, +9 dBm Input power, 4 GHz
2 20--165-dBc/Hz
Reverse Isolation 5V/5V bias, -25 dBm Input Power
2 29-62-dB
Saturated Output Power 5V/5V bias, +6 dBm Input Power
2 201821-dBm
Saturated Output Power 5V/5V bias, +6 dBm Input Power
20 29-18-dBm
Small Signal Gain 5V/5V bias, -25 dBm Input Power
20 29-18-dB
Small Signal Gain 5V/5V bias, -25 dBm Input Power
2 201822-dB

[1][2][3] Bias conditions for Ic and Ib tested with no RF input power. See typical performance plots for DC current vs. RF power. Bias conditions presented as VC/VB.

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Typical Performance Plots

Surface mount performance plots are taken in the EVAL-APM-6848 connectorized fixture, and include launch, line, and connector insertion losses.

Saturated Output Power vs. Frequency, VC = 6V graph for APM-6848SM
Small Signal Gain (dB), VC = 6V graph for APM-6848SM
Saturated Output Power vs. Frequency, VC = 5V graph for APM-6848SM
Small Signal Gain (dB), VC = 5V graph for APM-6848SM
Saturated Output Power vs. Frequency, VC = 4V graph for APM-6848SM
Small Signal Gain (dB), VC = 4V graph for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

7

Input Return Loss (dB), VC = 5V graph for APM-6848SM
Output Return Loss (dB), VC = 5V graph for APM-6848SM
Reverse Isolation (dB), VC = 5V graph for APM-6848SM
Output P1dB (dBm), 5V/5V Bias graph for APM-6848SM
IIP3 (dBm), -25 dBm Input Power graph for APM-6848SM
OIP3 (dBm), -25 dBm Input Power graph for APM-6848SM
Small Signal Gain (dB) Over Temperature vs. Frequency, 5V/5V Bias graph for APM-6848SM
Psat (dBm) Over Temperature vs. Frequency, 5V/5V Bias graph for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Ic, Ib (mA) vs. VB (VC = 5V) graph for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Time Domain Plots

Fast rise time is desirable for linear T3 mixer operation.

5 GHz, +5 dBm In, 5V/5V bias graph for APM-6848SM
10 GHz, +5 dBm In, 5V/5V bias graph for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Conversion Loss of Marki Mixers Using APM-6848SM as LO Driver

Conversion Loss of MM1-0626SSM Mixer with APM-6848SM as LO Driver (dB); 5V/5V Bias, 100 MHz IF, 5 dBm LO Input Power graph for APM-6848SM
Conversion Loss of MM1-0212H Mixer with APM-6848SM as LO Driver (dB); 5V/5V Bias, 100 MHz IF, 0 dBm LO Input Power graph for APM-6848SM
Conversion Loss of MM1-0312H Mixer with APM-6848SM as LO Driver (dB); 5V/5V Bias, 100 MHz IF, 0 dBm LO Input Power graph for APM-6848SM
Conversion Loss of MM1-0626H Mixer with APM-6848SM as LO Driver (dB); 5V/5V Bias, 100 MHz IF, 5 dBm LO Input Power graph for APM-6848SM

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Mechanical Data

Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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Rev: E | Copyright © 2019 - 2020 Marki Microwave LLC.

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