AMM-7473PSM_0.4 - 27 GHz Surface Mount Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-7473PSM	0.4 - 27 GHz Surface Mount Amplifier	QFN	REACH RoHS	Released	EAR99
EVB-AMM-7473P	Evaluation Board, 0.4 - 27 GHz Surface Mount Amplifier	EVB	REACH RoHS	Released	EAR99

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-7473PSM	0.4 - 27 GHz Surface Mount Amplifier	QFN	REACH RoHS	Released	EAR99
EVB-AMM-7473P	Evaluation Board, 0.4 - 27 GHz Surface Mount Amplifier	EVB	REACH RoHS	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2022-08-01	Initial Release
A	2025-02-27	Included ESD rating
B	2026-02-13	MTTF Table Added.

Port Configuration and Functions

Port Diagram

A port diagram of the AMM-7473PSM QFN package is shown below (X-ray view from the top).

Diagram of the port configuration for AMM-7473PSM

Port Functions

Port	Function	Description
10	Vg	Pin 10 provides a required negative bias which controls the power supply currents to the amplifier. More negative voltages decrease supply current. Apply gate bias voltage Vg before applying drain power supply.
11	CAP 3	Pin 11 is connected to internal bias circuitry and should be AC grounded through an off-chip bypass capacitor. The value should be at least 100 nF. This pin should not be directly connected to ground.
1,3, 5-8, 12-15, 17-22, 24, Paddle	Ground	These pins should be connected to ground. Package ground paddle must be connected to a DC/RF ground potential with high thermal and electrical conductivity.
16	RF Output	Pin 16 is the RF Output port of the amplifier. It is DC coupled, and RF matched to 50 Ω. An external DC blocking capacitor is required.
2	Cap 1	Pin 2 allows the user to attach additional off chip bypass capacitance to provide adequate low frequency AC grounding termination to the input matching network. The value should be at least 100 nF.
23	Vd	Pin 23 provides the main power supply for the amplifier. Apply gate bias voltage Vg before applying drain power supply.
4	RF Input	Pin 4 is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF input pad is GSG with 150 µm pitch.
9	Cap 2	Pin 9 is connected to internal bias circuitry and should be AC grounded through an off-chip bypass capacitor. The value should be at least 100 nF. This pin should not be directly connected to ground.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime.

Parameter	Maximum Rating	Unit
Drain Current (RF Applied)	550	mA
Drain Supply Voltage (Vd)	10	V
Gate Voltage (Vg)	0.5	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	150	°C
Max Junction Temperature for MTTF > 1E6 Hours	175	°C
Max Power Dissipation for MTTF of 1E6 hours at 85˚C Baseplate Temperature	3.9	W
Minimum Operating Temperature for MTTF > 1E6 hours	-55	°C
Minimum Storage Temperature	-65	°C
RF Input Power	18	dBm
θ_Jc, Junction to Case Thermal Resistance	23	ºC/W

FIT and MTTF Table

T (°C)	λ (TIF)	MTTF (hr)	MTTF (yr)
105	2,441.45	4.10E+05	47
85	310.48	3.22E+06	368
55	8.79	1.14E+08	12,992
25	0.12	8.24E+09	941,063

Package Information

Parameter	Details	Rating
ESD	125 to < 250 Volts	HBM Class 0B
Weight	Package name: QFN	0.05g
Dimensions	-	4 x 4 mm
Moisture Sensitivity Level	-	MSL 1

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd = 7 V, Idq=150 mA (where Idq is the drain current with no RF applied), Vg set as required to achieve Idq = 150 mA in a 50 Ω system.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Output P1dB	Vd =7 V, Vg set to achieve Idq = 150 mA	0.4	20	-	22	-	dBm
Current Consumption	Vd = 7 V, Vg = -0.65 V, no RF input applied	-	-	-	150	-	mA
Input IP3	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -15 dBm per tone, 10 MHz tone spacing	0.4	27	-	18	-	dBm
Input Power for Saturation	Vd = 7 V, Vg set to achieve Idq = 150 mA	0.4	27	-	11	-	dBm
Input Return Loss	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	8	-	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	2	5	-	2.9	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	15	27	-	3.6	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	5	15	-	1.8	-	dB
Output IP3	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -15 dBm per tone, 10 MHz tone spacing	0.4	27	-	34	-	dBm
Output Return Loss	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	8	-	-	dB
Reverse Isolation	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	-	40	-	dB
Saturated Output Power	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = +15 dBm	0.4	27	23	25	-	dBm
Small Signal Gain	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	20	14	17	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Output P1dB	Vd =7 V, Vg set to achieve Idq = 150 mA	0.4	20	-	22	-	dBm
Current Consumption	Vd = 7 V, Vg = -0.65 V, no RF input applied	-	-	-	150	-	mA
Input IP3	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -15 dBm per tone, 10 MHz tone spacing	0.4	27	-	18	-	dBm
Input Power for Saturation	Vd = 7 V, Vg set to achieve Idq = 150 mA	0.4	27	-	11	-	dBm
Input Return Loss	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	8	-	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	2	5	-	2.9	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	15	27	-	3.6	-	dB
Noise Figure	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	5	15	-	1.8	-	dB
Output IP3	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -15 dBm per tone, 10 MHz tone spacing	0.4	27	-	34	-	dBm
Output Return Loss	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	8	-	-	dB
Reverse Isolation	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	27	-	40	-	dB
Saturated Output Power	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = +15 dBm	0.4	27	23	25	-	dBm
Small Signal Gain	Vd = 7 V, Vg set to achieve Idq = 150 mA, Pin = -20 dBm	0.4	20	14	17	-	dB