Device Overview

General Description

The AMM-7200ASM is a surface-mount amplifier suitable for use as a single tone driver or general-purpose gain block. It can drive an L or H diode mixer from 12 to 46 GHz, or S diode mixer from 14 to 40 GHz. This amplifier also has exceptionally low input and output reflections, and excellent gain flatness in-band. The AMM-7200ASM is packaged in a compact 3mm QFN for surface mount integration onto printed circuit boards

Photo of AMM-7200ASM

Features

  • +18 dB Small Signal Gain
  • +22 dBm saturated output power
  • Excellent return losses
  • Compact 3mm QFN package

Applications

  • Mobile test and measurement equipment
  • Radar and satellite communications
  • 5G transceivers
  • LO driver for Marki L-, H-, and S-diode mixers

Functional Block Diagram

Block Diagram

Part Ordering Options

Part NumberDescriptionPackageGreen StatusProduct LifecycleExport Classification
AMM-7200ASM12-46 GHz GaAs Surface Mount LO Driver Amplifier QFN

REACH

RoHS

Released3A001.b.2.d
EVB-AMM-7200ASMEvaluation Board, 12-46 GHz GaAs Surface Mount LO Driver Amplifier EVAL

REACH

RoHS

ReleasedEAR99

Table Of Contents

Revision History

Revision CodeRevision DateComment
-2025-03-19Initial Release
A2026-02-13MTTF Table Added.

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

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Port Configuration and Functions

Port Diagram

A port diagram of the AMM-7200ASM’s QFN package is shown below.

Diagram of the port configuration for AMM-7200ASM

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

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Port Functions

PortFunctionDescriptionDC Equivalent
Circuit
GNDGround Ground paddle and non-connected pins must be connected to a DC/RF ground potential with high thermal and electrical conductivity, and low inductance.Equivalent circuit for the Ground
Pin 11RF Output Pin 11 is the RF output of the amplifier, and is matched to 50 ohms. It is internally DC blocked.Equivalent circuit for the RF Output
Pin 14Positive DC Supply Vd Pins 14 provides +2.5V to +4V DC voltage to the amplifier’s third stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage. Equivalent circuit for the Positive DC Supply Vd
Pin 15Positive DC Supply Vd Pins 15 provides +2.5V to +4V DC voltage to the amplifier’s second stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage. Equivalent circuit for the Positive DC Supply Vd
Pin 16Positive DC Supply Vd Pins 16 provides +2.5V to +4V DC voltage to the amplifier’s first stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage. Equivalent circuit for the Positive DC Supply Vd
Pin 2RF Input Pin 2 is the RF input of the amplifier, and is matched to 50 ohms. It is internally DC blocked.Equivalent circuit for the RF Input
Pin 6Negative DC Supply Vg Pin 6 provides -0.4V to -0.6V of DC voltage. This must be turned on before turning on the positive supply voltage to Pin 1. Equivalent circuit for the Negative DC Supply Vg

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

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Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may be inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.

ParameterMaximum RatingUnit
Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.) 11W
Maximum Operating Temperature 85°C
Maximum Storage Temperature 150°C
Max Junction Temperature for MTTF > 1E6 hours 175°C
Minimum Operating Temperature -40°C
Minimum Storage Temperature -65°C
Negative Bias Voltage (Pin 6) -2V
Positive Drain Supply Current (with RF Input) 2450mA
Positive Drain Supply Voltage (Pin 14, 15, 16) 4.5V
RF Input Power 20dBm
Thermal Resistance, θJC 94ºC/W

[1] Derates by 11 mW/ ˚C above 85 ˚C case temperature.

[2] Positive Drain Supply DC current is specified as Id1 + Id2 + Id3

FIT and MTTF Table

T (°C) λ (TIF) MTTF (hr) MTTF (yr)
1052,441.454.10E+0547
85310.483.22E+06368
558.791.14E+0812,992
250.128.24E+09941,063

Package Information

ParameterDetailsRating
Dimensions-3 x 3 mm
Moisture Sensitivity Level-MSL 1

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings .

ParameterMinNominalMaxUnit
Power Supply DC Current 1115180300mA
Ambient Temperature -402585°C
Input Power for Saturation 6912dBm
Power Supply DC Voltage 2.533V
Gate Bias DC Voltage -0.6-0.5-0.4V

[1] Power Supply DC current is specified as Id1 + Id2 + Id3

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

5

Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. QFNs are 100% RF tested.

ParameterTest ConditionsMinimum
Frequency
(GHz)
Maximum
Frequency
(GHz)
MinTypMaxUnit
Small Signal Gain 3V/-0.5V bias, -25 dBm Input Power
12 18-17-dB
Small Signal Gain 3V/-0.5V bias, -25 dBm Input Power
18 38-20-dB
Small Signal Gain 3V/-0.5V bias, -25 dBm Input Power
38 46-16-dB
Input Return Loss 3V/-0.5V bias, -25 dBm Input Power
12 46-18-dB
Output Return Loss 3V/-0.5V bias, -25 dBm Input Power
12 46-14-dB
Reverse Isolation 3V/-0.5V bias, -25 dBm Input Power
12 46-52-dB
Noise Figure 3V/-0.5V Bias
12 46-5.1-dB
Input Power for Saturation 3V/-0.5V bias
12 46-9-dBm
Saturated Output Power 13V/-0.5V bias
12 22-20-dBm
Output IP3 3V/-0.5V bias, -20 dBm Input Power
12 46-29-dBm
Current Consumption 23V/-0.4V
- --230-mA
Current Consumption 33V/-0.5V
- --180-mA
Current Consumption 43V/-0.6V
- --130-mA

[1] Saturated output power specification defined using the EVAL-AMM-7200SM P5dB compression curve shown in section 3.6, with board losses mathematically extracted.

[2] Bias conditions for Id tested with no RF input power. See section 3.6 for DC current vs. RF power. Bias conditions presented as Vd/Vg. Drain current is specified as Id1 + Id2 + Id3

[3][4] Bias conditions for Id tested with no RF input power. See section 3.6 for DC current vs. RF power. Bias conditions presented as Vd/Vg. Drain current is specified as Id1 + Id2 + Id3

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

6

Typical Performance Plots

Measurement data taken using EVB-AMM-7200P (Open QFN in house build) AFR de-embeded up to surface mount.

Psat (dBm) vs. Frequency, over Bias graph for AMM-7200ASM
Small Signal Gain (dB) vs. Frequency, Vd = 3V graph for AMM-7200ASM
Output IP3 (dBm) vs. Frequency, Vd=3V graph for AMM-7200ASM
Noise Figure (dB) vs. Frequency, 3V/-0.5V Bias graph for AMM-7200ASM
Input Return Loss (dB) vs. Frequency, Vd = 3V graph for AMM-7200ASM
Output Return Loss (dB) vs. Frequency, Vd = 3V graph for AMM-7200ASM
Reverse Isolation (dB) vs. Frequency, Vd = 3V graph for AMM-7200ASM

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

7

Application Circuit

Application Circuit for AMM-7200ASM

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

8

Mechanical Data

Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

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Rev: A | Copyright © 2025 - 2026 Marki Microwave LLC.

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