AMM-10202PSM_15-50 GHz GaAs Surface Mount LO Driver Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-10202PSM	15-50 GHz GaAs Surface Mount LO Driver Amplifier	DFN	REACH RoHS	Released	3A001.b.2.d
EVB-AMM-10202P	Evaluation Board, AMM-10202PSM, 15-50 GHz GaAs Surface Mount LO Driver Amplifier	EVB	REACH RoHS	Released	-

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-10202PSM	15-50 GHz GaAs Surface Mount LO Driver Amplifier	DFN	REACH RoHS	Released	3A001.b.2.d
EVB-AMM-10202P	Evaluation Board, AMM-10202PSM, 15-50 GHz GaAs Surface Mount LO Driver Amplifier	EVB	REACH RoHS	Released	-

Revision History

Revision Code	Revision Date	Comment
-	2025-07-23	Initial Release
A	2026-02-13	MTTF Table Added.

Port Configuration and Functions

Port Diagram

A top-down (x-ray) view of the AMM-10202PSM’s DFN package is shown below.

Diagram of the port configuration for AMM-10202PSM

Port Functions

Port	Function	Description
GND	Ground	Bottom side must be connected to a DC/RF ground potential with high thermal and electrical conductivity.
Pin 1	Positive DC Supply Vd	Pin 1 provides +2V to +4V DC voltage and drain current to the amplifier. Negative voltage must be supplied to Pin 4 before turning on the positive supply voltage.
Pin 2	RF Input	Pin 2 is the RF input of the amplifier. It is internally DC blocked.
Pin 3	RF Output	Pin 3 is the RF output of the amplifier. It is internally DC blocked.
Pin 4	Negative DC Supply Vg	Pin 4 provides -0.15V to -0.35V of DC voltage. This must be turned on before turning on the positive supply voltage to Pin 1.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may be inoperable or have a reduced lifetime.

Parameter	Maximum Rating	Unit
Continuous Power Dissipation (PDISS)	1.2	W
Maximum Operating Temperature	85	°C
Maximum Storage Temperature	150	°C
Max Junction Temperature for MTTF > 1E6 Hours	175	°C
Minimum Operating Temperature	-40	°C
Minimum Storage Temperature	-65	°C
Negative Bias Current (Pin 4)	10	μA
Negative Bias Voltage (Pin4)	-2	V
Positive Bias Current (Pin1) ¹	300	mA
Positive Bias Voltage (Pin1)	4	V
RF Input Power	15	dBm
Thermal Resistance, θJC	78.5	ºC/W

Maximum Continuous Power Dissipation indicates power that will maintain an MTTF > 1E6 hours under typical operating conditions at max operating temperature. Specific use cases may differ, contact support for more detailed information.

^[1] Maximum current draw is 400 mA when not limited by continuous power dissipation rating

FIT and MTTF Table

T (°C)	λ (TIF)	MTTF (hr)	MTTF (yr)
105	2,441.45	4.10E+05	47
85	310.48	3.22E+06	368
55	8.79	1.14E+08	12,992
25	0.12	8.24E+09	941,063

Package Information

Parameter	Details	Rating
ESD	< 250 Volts	HBM Class 0
Dimensions	-	4 x 4 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ambient Temperature	-55	25	85	°C
Positive DC Current	100	200	300	mA
Positive DC Voltage	2	4	4	V
Negative DC Voltage	-0.15	-0.25	-0.35	V

Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. DFNs are 100% RF tested.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	4V/200mA bias, -25 dBm Input Power	15	50	-	23	-	dB
Input Return Loss	4V/200mA bias, -25 dBm Input Power	15	50	-	8	-	dB
Output P1dB	4V/200mA bias	15	50	-	17.5	-	dBm
Saturated Output Power	4V/200mA bias	15	50	-	19	-	dBm
Output Return Loss	4V/200mA bias, -25 dBm Input Power	15	50	-	7	-	dB
Input IP3	4V/200mA bias, -25 dBm Input Power	15	50	-	1.5	-	dBm
Output IP3	4V/200mA bias, -25 dBm Input Power	15	50	-	24	-	dBm
Input IP2	4V/200mA bias, -25 dBm Input Power	7.5	25	-	10.5	-	dBm
Output IP2	4V/200mA bias, -25 dBm Input Power	7.5	25	-	31	-	dBm
Noise Figure	4V/200mA bias, -25 dBm Input Power	15	50	-	6.5	-	dB
Reverse Isolation	4V/200mA bias, -25 dBm Input Power	15	50	-	55	-	dB
Saturated Output Power	4V/200mA bias	15	20	-	20	-	dBm
Input Power for Saturation	4V/200mA bias	15	50	-	3	-	dBm

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	4V/200mA bias, -25 dBm Input Power	15	50	-	23	-	dB
Input Return Loss	4V/200mA bias, -25 dBm Input Power	15	50	-	8	-	dB
Output P1dB	4V/200mA bias	15	50	-	17.5	-	dBm
Saturated Output Power	4V/200mA bias	15	50	-	19	-	dBm
Output Return Loss	4V/200mA bias, -25 dBm Input Power	15	50	-	7	-	dB
Input IP3	4V/200mA bias, -25 dBm Input Power	15	50	-	1.5	-	dBm
Output IP3	4V/200mA bias, -25 dBm Input Power	15	50	-	24	-	dBm
Input IP2	4V/200mA bias, -25 dBm Input Power	7.5	25	-	10.5	-	dBm
Output IP2	4V/200mA bias, -25 dBm Input Power	7.5	25	-	31	-	dBm
Noise Figure	4V/200mA bias, -25 dBm Input Power	15	50	-	6.5	-	dB
Reverse Isolation	4V/200mA bias, -25 dBm Input Power	15	50	-	55	-	dB
Saturated Output Power	4V/200mA bias	15	20	-	20	-	dBm
Input Power for Saturation	4V/200mA bias	15	50	-	3	-	dBm