ADM-8625PSM_0.75 - 8 GHz High Dynamic Range Gain Block

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8625PSM	0.75 - 8 GHz High Dynamic Range Gain Block	QFN	REACH RoHS	Released	EAR99
EVB-ADM-8625P	Evaluation Board, 0.75 - 8 GHz High Dynamic Range Gain Block Amplifier	EVB	REACH RoHS	Released	-

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8625PSM	0.75 - 8 GHz High Dynamic Range Gain Block	QFN	REACH RoHS	Released	EAR99
EVB-ADM-8625P	Evaluation Board, 0.75 - 8 GHz High Dynamic Range Gain Block Amplifier	EVB	REACH RoHS	Released	-

Revision History

Revision Code	Revision Date	Comment
-	2023-06-01	Initial Datasheet Release

Port Configuration and Functions

Port Diagram

A port diagram of the ADM-8625PSM QFN package is shown below (X-ray view from the top).

Diagram of the port configuration for ADM-8625PSM

Port Functions

Port	Function	Description	DC Equivalent Circuit
Paddle	Gnd	Package ground paddle must be connected to a DC/RF ground potential with high thermal and electrical conductivity.	-
Pin 12	Vb	Pin 12 provides DC bias to the amplifier. The DC value at this pin should be set to 5V for normal operation. This pin is a current mirror bias input used to set the drain current Id. An external resistor (~10-500 Ohms) may be used in series with this port to adjust the quiescent current draw of the amplifier.	-
Pin 1,3,4,5,7,9,10,11	NC	These pins are internally no-connects and should be connected to DC/RF ground.	-
Pin 2	RF Input	Pin 2 is the RF Input port of the amplifier. This pin is internally DC blocked and is RF matched to 50 Ω.	-
Pin 6	Vd	Pin 6 is the main power supply to the amplifier. The DC value at this pin should be set to 5V for normal operation.	-
Pin 8	RF Output	Pin 8 is the RF Output port of the amplifier. This pin is internally DC blocked and is RF matched to 50 Ω.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Bias Current (Ib)	10	mA
Bias Voltage (Vb)	6	V
Drain Current (RF Applied)	75	mA
Drain Supply Voltage (Vd)	6	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Max Junction Temperature for MTTF of 1E6 hours	175	°C
Max Power Dissipation for MTTF of 1E6 hours	0.34	W
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-55	°C
RF Input Power	15	dBm
θ_Jc, Junction to Case Thermal Resistance	62	ºC/W

Package Information

Parameter	Details	Rating
Weight	Package name: QFN	0.023g
Dimensions	-	3 x 3 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ta Ambient Temperature	-40	25	85	°C
Power Supply DC Voltage (Vd)	3	5	6	V
Power Supply DC Bias (Vb)	3	5	6	V
Power Supply DC Current (Id) (No RF Input) ¹	26	49	58	mA
Power Supply DC Current (Ib)	2	4	4	mA
Input Power for Saturation	-	6	-	dBm

^[1] Recommended operating current conditions without RF input applied. Data in this datasheet was measured on the EVB-ADM-8625P evaluation board with Rbias = 130Ω on the Vb line.

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Rbias = 130Ω and Vd,Vb = 5 V.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd, Vb = 5 V no RF input	-	-	-	49	-	mA
Input IP2	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	13	-	dBm
Input IP3	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	12	-	dBm
Input Power for Saturation	Vd, Vb = 5V	0.75	8	-	6	-	dBm
Input Return Loss	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	15	-	dB
Noise Figure	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	1.5	-	dB
Output IP2	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	31	-	dBm
Output IP3	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	27	-	dBm
Output P1dB	Vd, Vb = 5V	0.75	8	-	17	-	dBm
Output Return Loss	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	16	-	dB
Reverse Isolation	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	24	-	dB
Saturated Output Power	Vd, Vb = 5V	0.75	7	-	19	-	dBm
Small Signal Gain	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	16	18	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd, Vb = 5 V no RF input	-	-	-	49	-	mA
Input IP2	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	13	-	dBm
Input IP3	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	12	-	dBm
Input Power for Saturation	Vd, Vb = 5V	0.75	8	-	6	-	dBm
Input Return Loss	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	15	-	dB
Noise Figure	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	1.5	-	dB
Output IP2	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	31	-	dBm
Output IP3	Vd, Vb = 5 V Pin = -15 dBm per tone, 10 MHz tone spacing	0.75	8	-	27	-	dBm
Output P1dB	Vd, Vb = 5V	0.75	8	-	17	-	dBm
Output Return Loss	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	16	-	dB
Reverse Isolation	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	-	24	-	dB
Saturated Output Power	Vd, Vb = 5V	0.75	7	-	19	-	dBm
Small Signal Gain	Vd, Vb = 5 V Pin = -20 dBm	0.75	8	16	18	-	dB