ADM-8096PSM_0.09 - 6 GHz High Dynamic Range Gain Block

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8096PSM	0.09 - 6 GHz High Dynamic Range Gain Block	DFN	REACH RoHS	Released	EAR99
EVB-ADM-8096P	Evaluation Board, 0.09 - 6 GHz High Dynamic Range Gain Block	EVB	REACH RoHS	Released	EAR99

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8096PSM	0.09 - 6 GHz High Dynamic Range Gain Block	DFN	REACH RoHS	Released	EAR99
EVB-ADM-8096P	Evaluation Board, 0.09 - 6 GHz High Dynamic Range Gain Block	EVB	REACH RoHS	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2022-09-01	Initial Release
A	2022-10-01	Package Drawing Updated
B	2026-02-26	ESD Class Added

Port Configuration and Functions

Port Diagram

A port diagram of the ADM-8096PSM DFN package is shown below (X-ray view from the top). The pin functions are detailed below.

Diagram of the port configuration for ADM-8096PSM

Port Functions

Port	Function	Description	DC Equivalent Circuit
1,3,6	Gnd	These pins should be connected to ground.	-
2	RF Input	Pin 2 is the RF Input port of the amplifier. It is internally RF matched to 50 Ω and requires an external DC blocking cap.	-
4	Vb	Pin 4 provides DC bias to the amplifier. Placement of an external series bias resistor allows this pin to be supplied by the same supply line providing 5V to Pin 5. For normal operation, this pin can be left floating. DO NOT GROUND this pin. Device drain current will change proportional to the current flowing into this pin. RF performance can be balanced with DC power consumption by adjusting the current into this pin.	-
5	RF Out / Vd	Pin 5 is the RF Output port and is also the Vd port providing the main power supply to the amplifier. This pin is DC coupled and requires an external bias-T or discrete choke and DC blocking capacitor. This port is RF matched to 50 Ω. DC voltage at this pin should be set to 5V for normal operation.	-
Paddle	Gnd	Package ground paddle must be connected to a DC/RF ground potential with high thermal and electrical conductivity.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Bias Voltage (Vb)	8	V
Drain Current (No RF Applied)	222	mA
Drain Supply Voltage (Vd)	8	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Max Junction Temperature for MTTF of 1E6 hours	175	°C
Max Power Dissipation for MTTF of 1E6 hours	0.72	W
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-65	°C
RF Input Power	15	dBm
θ_Jc, Junction to Case Thermal Resistance	65	ºC/W

Package Information

Parameter	Details	Rating
ESD	250 to < 500 Volts	HBM Class 1A
Weight	Package name: DFN	0.007g
Dimensions	-	1.3 x 2 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ambient Temperature	-40	25	85	°C
Power Supply DC Voltage (Vd)	3	5	6	V
Power Supply DC Current (Id) (No RF Input) ¹	31	58	71	mA
Input Power for Saturation	2	4	6	dBm

^[1] Recommended operating current conditions without RF input applied.

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd = 5 V, Vb = Float.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd = 5 V, no RF input	-	-	-	58	-	mA
Input IP3	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	11	-	dBm
Input Power for Saturation	Vd = 5V	0.09	6	-	4	-	dBm
Input Return Loss	Vd = 5 V, Pin = -20 dBm	0.09	6	-	15	-	dB
Noise Figure	Vd = 5 V, Pin = -20 dBm	0.09	3	-	1.5	-	dB
Noise Figure	Vd = 5 V, Pin = -20 dBm	3	6	-	1.9	-	dB
Output IP2	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	35	-	dBm
Output IP3	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	33	-	dBm
Output P1dB	Vd = 5V	0.09	6	-	21	-	dBm
Output Return Loss	Vd = 5 V, Pin = -20 dBm	0.09	6	-	17	-	dB
Reverse Isolation	Vd = 5 V, Pin = -20 dBm	0.09	6	-	28	-	dB
Saturated Output Power	Vd = 5 V	0.09	6	-	23	-	dBm
Small Signal Gain	Vd = 5 V, Pin = -20 dBm	0.09	6	-	22	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Current Consumption	Vd = 5 V, no RF input	-	-	-	58	-	mA
Input IP3	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	11	-	dBm
Input Power for Saturation	Vd = 5V	0.09	6	-	4	-	dBm
Input Return Loss	Vd = 5 V, Pin = -20 dBm	0.09	6	-	15	-	dB
Noise Figure	Vd = 5 V, Pin = -20 dBm	0.09	3	-	1.5	-	dB
Noise Figure	Vd = 5 V, Pin = -20 dBm	3	6	-	1.9	-	dB
Output IP2	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	35	-	dBm
Output IP3	Vd = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	6	-	33	-	dBm
Output P1dB	Vd = 5V	0.09	6	-	21	-	dBm
Output Return Loss	Vd = 5 V, Pin = -20 dBm	0.09	6	-	17	-	dB
Reverse Isolation	Vd = 5 V, Pin = -20 dBm	0.09	6	-	28	-	dB
Saturated Output Power	Vd = 5 V	0.09	6	-	23	-	dBm
Small Signal Gain	Vd = 5 V, Pin = -20 dBm	0.09	6	-	22	-	dB