Device Overview

General Description

The AMM-9893CH is a wideband mmWave amplifier enabling operation over a 45-95 GHz bandwidth. The amplifier features 18dB gain, excellent return losses, and 18dBm output power. Available as a wire-bondable die, or packaged in a connectorized module under the part number AMM-9893M

Photo of AMM-9893CH

Features

  • Ultra-broadband operation (45-95GHz)
  • 18dB gain
  • Excellent return losses

Applications

  • Test and Measurement Equipment
  • SATCOM
  • LO signal chain for mmWave mixers
  • Radar
  • Electronic warfare equipment
  • Aerospace and Defense

Functional Block Diagram

Block Diagram

Part Ordering Options

Part NumberDescriptionPackageConnectorsGreen StatusProduct LifecycleExport Classification
AMM-9893M45 – 95 GHz mmWave LO Driver AmplifierM-

REACH

RoHS

Released3A001.b.4.e.3
AMM-9893CH45-95GHz mmWave LO Driver AmplifierCH-

REACH

RoHS

Released3A001.b.2.h

Table Of Contents

Revision History

Revision CodeRevision DateComment
-2024-10-09Initial Release
A2026-02-13MTTF Table Added.

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

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Port Configuration and Functions

Port Diagram

The port diagram of the AMM-9893CH is shown below. There are two sets of DC pads, one on the North and one on the South edge of the die. They perform identical functions and are internally connected on the die. They are provided for convenience in bias routing and only one pad of each type needs to be connected.

Diagram of the port configuration for AMM-9893CH

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

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Port Functions

PortFunctionDescriptionDC Equivalent
Circuit
GNDGround Bottom side of the die must be connected to a DC/RF ground with high thermal and electrical conductivity. There is no need to bond to the Gnd pads on the top of the die.Equivalent circuit for the Ground
RF InRF Input The amplifier’s RF Input pad, this pad has an internal DC blocking capacitor and is RF matched to 50 Ohms.Equivalent circuit for the RF Input
RF OutRF Output The amplifier’s RF Output pad, this pad has an internal DC blocking capacitor and is RF matched to 50 Ohms.Equivalent circuit for the RF Output
VD1Positive DC Supply Voltage This pad provides DC power to the drain of the first stage of the amplifier. DC voltage at this pin should be set to 3.5V for normal operation.Equivalent circuit for the Positive DC Supply Voltage
VD2Positive DC Supply Voltage This pad provides DC power to the drain of the second stage of the amplifier. DC voltage at this pin should be set to 3.5V for normal operation.Equivalent circuit for the Positive DC Supply Voltage
VD3Positive DC Supply Voltage This pad provides DC power to the drain of the third stage of the amplifier. DC voltage at this pin should be set to 3.5V for normal operation.Equivalent circuit for the Positive DC Supply Voltage
VD4Positive DC Supply Voltage This pad provides DC power to the drain of the fourth stage of the amplifier. DC voltage at this pin should be set to 3.5V for normal operation.Equivalent circuit for the Positive DC Supply Voltage
VG12Gate Bias Voltage This pad provides DC bias to the gates of stages 1 and 2 of the amplifier. This pin requires a negative bias voltage for normal operation. The drain current Id of the amplifier will be controlled by the voltage applied to this pin. As this voltage becomes more positive, drain current will increase. For normal operation, the voltage on this pin should be the same as Vg34 and set to produce a drain current of 350mA.Equivalent circuit for the Gate Bias Voltage
VG34Gate Bias Voltage This pad provides DC bias to the gates of stages 3 and 4 of the amplifier. This pin requires a negative bias voltage for normal operation. The drain current Id of the amplifier will be controlled by the voltage applied to this pin. As this voltage becomes more positive, drain current will increase. For normal operation, the voltage on this pin should be the same as Vg12 and set to produce a drain current of 350mA.Equivalent circuit for the Gate Bias Voltage

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

4

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

ParameterMaximum RatingUnit
Drain Supply Voltage (Vd) 4V
Gate Supply Voltage (Vg) -1.5V
Maximum Operating Temperature for MTTF > 1E6 hours 85°C
Maximum Storage Temperature 125°C
Minimum Operating Temperature for MTTF > 1E6 hours -40°C
Minimum Storage Temperature -65°C
Positive Drain Supply Current (Id) (with RF Input) 450mA
RF Input Power 15dBm

FIT and MTTF Table

T (°C) λ (TIF) MTTF (hr) MTTF (yr)
1052,441.454.10E+0547
85310.483.22E+06368
558.791.14E+0812,992
250.128.24E+09941,063

Package Information

ParameterDetailsRating
Dimensions-2.652 x 3.192

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

ParameterMinNominalMaxUnit
Positive DC Voltage (Vd) -3.5-V
Gate Bias DC Voltage (Vg) -2-V
Positive DC Current (Id) (No RF Input) 1-350-mA
Input Power for Saturation -5--

[1] Recommended operating current condition without RF input applied.

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

5

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd = 5V and Vg set such that Id = 350mA.

ParameterTest ConditionsMinimum
Frequency
(GHz)
Maximum
Frequency
(GHz)
MinTypMaxUnit
Input Return Loss Vd=3.5V, Vg=-0.2V Pin=-20dBm
45 95-15-dB
Output Return Loss Vd=3.5V, Vg=-0.2V Pin=-20dBm
45 95-15-dB
Saturated Output Power Vd=3.5V, Vg=-0.2V
45 95-18-dBm
Small Signal Gain Vd=3.5V, Vg=-0.2V Pin=-20dBm
45 95-18-dB

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

6

Performance plots measured using the recommended application circuit shown below.

Typical Performance Plots

Small Signal Gain Over Temperature (dB) Vd = 3V graph for AMM-9893CH
Return Loss graph for AMM-9893CH
Return Loss graph for AMM-9893CH

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

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Typical Performance Plots (AMM-9893M Module)

Reverse Isolation graph for AMM-9893CH
Input Return Loss graph for AMM-9893CH
Output Return Loss graph for AMM-9893CH
Small Signal Gain graph for AMM-9893CH
Saturated Output Power (dBm) graph for AMM-9893CH

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

8

AMM-9893M - Typical Performance Plots

Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.

Reverse Isolation graph for AMM-9893M
Saturated Output Power (dBm) graph for AMM-9893M
Small Signal Gain graph for AMM-9893M
Return Loss graph for AMM-9893M

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

9

Application Circuit

Application Circuit for AMM-9893CH

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

10

Mechanical Data

Outline Drawing

Download : Outline 2D Drawing

Outline Drawing

Rev: A | Copyright © 2024, 2026 Marki Microwave LLC.

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