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The AMM-9025CH is a wideband distributed low noise amplifier capable of providing 14 dB gain from 10MHz to 65 GHz and a low 2.8 dB typical noise figure from 7 to 30GHz. The ADM-9025CH is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. AMM-9025CH is DC coupled with the low end limited by the blocking capacitors. The amplifier has excellent return losses and gain flatness in a small wirebondable 1.75 x 1.2 mm die.
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-9025CH | 0.01 - 65GHz mmWave GaAs Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-9025CH | 0.01 - 65GHz mmWave GaAs Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2024-07-09 | Initial Release |
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier
| Port | Function | Description | DC Equivalent Circuit |
|---|---|---|---|
| ACG1 | AC Ground | This pad should be attached to off-chip bypass capacitors. The recommended bypassing for this pad is 0.1uF+100pF. Do not Ground this pad. | - |
| ACG3 | AC Ground | This pad should be attached to off-chip bypass capacitors. The recommended bypassing for this pad is 0.1uF+100pF. Do not ground this pad. | - |
| ACG4 | AC Ground | This pad should be attached to off-chip bypass capacitors. The recommended bypassing for this pad is 0.1uF+100pF. Do not ground this pad. For simplified application circuits, -Vg may be applied through this pad instead of VGG1 pad. | |
| GND | Ground | The bottom side of the die must be connected to a DC/RF ground with high thermal and electrical conductivity. There is no need to bond the GND pads on the top surface of the die. | |
| RF In | RF Input | This is the amplifiers RF input pad. This pad requires an external DC blocking capacitor as shown in the application schematic. This pad is internally RF matched to 50 Ohms. | |
| RF Out | RF Output | This is the amplifiers RF output pad. this pad requires an external DC blocking capacitor as shown in the application schematic. This pad is internally RF matched to 50 Ohms. | |
| VDD/ACG2 | Drain Supply Voltage | This pad provides DC power to the drain of the amplifier. This pad can share 0.1uF+100pF bypass capacitors with ACG1 pad. The DC voltage at this pin should be set to 6V for normal operation. | |
| VGG1 | Gate Bias Voltage | This pad provides DC bias to the gate of the amplifier. This pin requires a negative bias voltage for normal operation. The drain current Id of the amplifier will be controlled by the voltage applied to this pin. As this voltage becomes more positive, drain current will increase. For normal operation, the voltage on this pin should be set to produce a drain current of 65mA. | |
| VGG2 | NC | No connect. Do not connect or ground this pad. | - |
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Gate Voltage (Vg) | -1.5 | V |
| Input Power 1 | 15 | dBm |
| Maximum Operating Temperature for MTTF > 1E6 hours | 85 | °C |
| Minimum Operating Temperature for MTTF > 1E6 hours | -40 | °C |
| Positive Drain Supply Current (Id) (with RF Input) | 98 | mA |
| Positive Drain Supply Voltage (Vd) | 7 | V |
[1] Needs Testing
| Parameter | Details | Rating |
|---|---|---|
| Dimensions | - | 1.75x1.2mm |
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Positive DC Voltage (Vd) | - | 6 | - | V |
| Positive Supply Current | - | 65 | - | mA |
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier
Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd=6V and Vg such that Id=65mA.
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Input Return Loss | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 20 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 7 | - | 4.2 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 7 | 30 | - | 2.8 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 30 | 50 | - | 4.4 | - | dB |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 10 | 30 | - | 22 | - | dBm |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 30 | 34 | - | 25 | - | dBm |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 0.01 | 10 | - | 28 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 0.01 | 30 | - | 26 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 50 | 65 | - | 18 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 30 | 50 | - | 23 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 0.01 | 20 | - | 14 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 50 | 65 | - | 7.5 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 20 | 50 | - | 11 | - | dBm |
| Output Return Loss | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 24 | - | dB |
| Reverse Isolation | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 37 | - | dB |
| Small Signal Gain | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 14 | - | dB |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Input Return Loss | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 20 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 7 | - | 4.2 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 7 | 30 | - | 2.8 | - | dB |
| Noise Figure | Vd=6V,Id=65mA,Pin=-20dBm | 30 | 50 | - | 4.4 | - | dB |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 10 | 30 | - | 22 | - | dBm |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 30 | 34 | - | 25 | - | dBm |
| Output IP2 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 0.01 | 10 | - | 28 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 0.01 | 30 | - | 26 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 50 | 65 | - | 18 | - | dBm |
| Output IP3 | Vd=6V,Id=65mA,Pin=-15 dBm per tone, 1 MHz tone spacing | 30 | 50 | - | 23 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 0.01 | 20 | - | 14 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 50 | 65 | - | 7.5 | - | dBm |
| Output P1dB | Vd=6V,Id=65mA | 20 | 50 | - | 11 | - | dBm |
| Output Return Loss | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 24 | - | dB |
| Reverse Isolation | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 37 | - | dB |
| Small Signal Gain | Vd=6V,Id=65mA,Pin=-20dBm | 0.01 | 65 | - | 14 | - | dB |
Performance plots measured using the recommended application circuit shown below.
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier
AMM-9025CH
0.01 - 65GHz mmWave GaAs Driver Amplifier