Port Diagram
A port diagram of the AMM-7200ACH is shown below.
Sales: 408-778-9952 | General: 408-778-4200 | Fax: 408-778-4300
Sales & Customer Support: [email protected]
Tech Support: [email protected]
Device Overview
General Description
The AMM-7200ACH is a general-purpose broadband MMIC driver amplifier that provides +20 dBm output power suitable for driving a Marki H or L diode mixer at 12-46 GHz and S diode mixer from 14-40 GHz with low current consumption. The amplifier also has excellent return losses and a small die size which allows it to be used in a variety of applications. It has built in DC-blocking capacitors on the input and output.
Features
- +20 dBm Output Power
- 18 dB gain
- Excellent Return Losses
- Small Die size
Applications
- Mobile test and measurement equipment
- Radar
- SATCOM
- 5G Transceivers
- Driver amplifier L,H,S – diode mixers
Functional Block Diagram
Part Ordering Options
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-7200ACH | 12 GHz – 46 GHz GaAs Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-7200ACH | 12 GHz – 46 GHz GaAs Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Table Of Contents
- Device Overview
- Port Configuration and Functions
- Revision History
- Specifications
- Operation
- Mechanical Data
Revision History
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2024-09-10 | Initial Release |
| A | 2025-04-02 | Outline Drawing update |
| B | 2026-02-13 | MTTF Table Added. |
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Port Configuration and Functions
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Port Functions
| Port | Function | Description | DC Equivalent Circuit |
|---|---|---|---|
| GND | Ground | Ground is provided through the backside of the die. The backside of the die must be connected to a DC/RF ground with high thermal and electrical conductivity. |  |
| RF In | RF Input | This is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF input pad is GSG with 175 µm pitch. |  |
| RF Out | RF Output | This is the RF Output port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF output pad is GSG with 175 µm pitch. |  |
| VD1 | Drain Supply Voltage | Pad VD1 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. |  |
| VD2 | Drain Supply Voltage | Pad VD2 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. |  |
| VD3 | Drain Supply Voltage | Pad VD3 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. |  |
| VG1 | Gate Supply Voltage | VG1 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG1 pad before applying any VD drain supply. |  |
| VG2 | Gate Supply Voltage | VG2 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG2 pad before applying any VD drain supply. | |
| VG3 | Gate Supply Voltage | VG3 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG3 pad before applying any VD drain supply. | |
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Specifications
Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.) 1 | 1 | W |
| Maximum Operating Temperature | 85 | °C |
| Maximum Storage Temperature | 150 | °C |
| Max Junction Temperature for MTTF > 1E6 Hours | 175 | °C |
| Minimum Operating Temperature | -40 | °C |
| Minimum Storage Temperature | -65 | °C |
| Negative Bias Voltage (Vg) | -2 | V |
| Positive Drain Supply Current (Id) (with RF Input) | 450 | mA |
| Positive Drain Supply Voltage (Vd) | 4.5 | V |
| RF Input Power | 20 | dBm |
| Thermal Resistance, θJC | 90 | ºC/W |
[1] Derates by 11 mW/ ˚C above 85 ˚C case temperature.
FIT and MTTF Table
| T (°C) | λ (TIF) | MTTF (hr) | MTTF (yr) |
|---|---|---|---|
| 105 | 2,441.45 | 4.10E+05 | 47 |
| 85 | 310.48 | 3.22E+06 | 368 |
| 55 | 8.79 | 1.14E+08 | 12,992 |
| 25 | 0.12 | 8.24E+09 | 941,063 |
Package Information
| Parameter | Details | Rating |
|---|---|---|
| Dimensions | - | 1.38 x 1.25 mm |
Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Power Supply DC current should be modified by changing bias voltage Vg to maintain junction temperature within MTTF target for given operating conditions.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Ambient Temperature | -40 | 25 | 85 | °C |
| Input Power for Saturation | 6 | 9 | 12 | dBm |
| Negative Bias Voltage (Vg) | -0.6 | -0.5 | -0.4 | V |
| Power Supply DC Voltage (Vd) | 2.5 | 3 | 3 | V |
| Power Supply DC Current (Id) (No RF Input) | 100 | 150 | 210 | mA |
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 3V/-0.4V | - | - | - | 200 | - | mA |
| Current Consumption 2 | 3V/-0.5V | - | - | - | 150 | - | mA |
| Current Consumption 3 | 3V/-0.6V | - | - | - | 100 | - | mA |
| Input IP3 | 3V/-0.5V, -20 dBm Input Power | 12 | 46 | - | 12 | - | dBm |
| Input Power for Saturation | 3V/-0.5V bias | 12 | 46 | - | 9 | - | dBm |
| Input Return Loss | 3V/-0.5V Bias | 12 | 46 | - | 19 | - | dB |
| Noise Figure | 3V/-0.5V bias | 12 | 46 | - | 5.9 | - | dB |
| Output IP3 | 3V/-0.5V, -20 dBm Input Power | 12 | 46 | - | 29 | - | dBm |
| Output P1dB | 3V/-0.5V bias | 12 | 46 | - | 19 | - | dBm |
| Output Return Loss | 3V/-0.5V Bias | 12 | 46 | - | 18 | - | dB |
| Reverse Isolation | 3V/-0.5V Bias | 12 | 46 | - | 60 | - | dB |
| Saturated Output Power 4 | 3V/-0.5V bias | 18 | 35 | 17 | 20.5 | - | dBm |
| Saturated Output Power 5 | 3V/-0.5V bias | 12 | 18 | - | 18 | - | dBm |
| Saturated Output Power 6 | 3V/-0.5V bias | 35 | 46 | - | 18.5 | - | dBm |
| Small Signal Gain | 3V/-0.5V bias | 18 | 35 | 14 | 18 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 12 | 18 | - | 17 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 35 | 46 | - | 15 | - | dB |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 3V/-0.4V | - | - | - | 200 | - | mA |
| Current Consumption 2 | 3V/-0.5V | - | - | - | 150 | - | mA |
| Current Consumption 3 | 3V/-0.6V | - | - | - | 100 | - | mA |
| Input IP3 | 3V/-0.5V, -20 dBm Input Power | 12 | 46 | - | 12 | - | dBm |
| Input Power for Saturation | 3V/-0.5V bias | 12 | 46 | - | 9 | - | dBm |
| Input Return Loss | 3V/-0.5V Bias | 12 | 46 | - | 19 | - | dB |
| Noise Figure | 3V/-0.5V bias | 12 | 46 | - | 5.9 | - | dB |
| Output IP3 | 3V/-0.5V, -20 dBm Input Power | 12 | 46 | - | 29 | - | dBm |
| Output P1dB | 3V/-0.5V bias | 12 | 46 | - | 19 | - | dBm |
| Output Return Loss | 3V/-0.5V Bias | 12 | 46 | - | 18 | - | dB |
| Reverse Isolation | 3V/-0.5V Bias | 12 | 46 | - | 60 | - | dB |
| Saturated Output Power 4 | 3V/-0.5V bias | 18 | 35 | 17 | 20.5 | - | dBm |
| Saturated Output Power 5 | 3V/-0.5V bias | 12 | 18 | - | 18 | - | dBm |
| Saturated Output Power 6 | 3V/-0.5V bias | 35 | 46 | - | 18.5 | - | dBm |
| Small Signal Gain | 3V/-0.5V bias | 18 | 35 | 14 | 18 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 12 | 18 | - | 17 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 35 | 46 | - | 15 | - | dB |
[1][2][3] Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.
[4][5][6] Saturated Output Power specification defined using the AMM-7200UC.
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Typical Performance Plots
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency,%20over%20Bias.png)
%20vs.%20Frequency%20at%20Vd%20=%203V,%20Idq%20=%20155mA.png)
%20vs.%20Frequency,%20over%20Bias.png)
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Application Circuit
AMM-7200ACH
12 GHz – 46 GHz GaAs Driver Amplifier
Mechanical Data
Outline Drawing
Download : Outline 2D Drawing
Notes:
1. CH substrate is .002 Thick GaAs.
2. I/O traces finish is 4 microns Au. Ground plane finish is 5 microns Au.
3. Tolerance for X, Y dimensions is ± 0.002 in.
Tolerance for Z dimension is ± 0.0005 in.
Tolerance for pad location is ± 0.0001 in.