Port Diagram
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Device Overview
General Description
The AMM-11078CH is a wideband GaAs distributed amplifier covering 0.01 to 40 GHz, delivering 17.5 dB small-signal gain with high output power and linearity. It provides up to +24 dBm saturated output power, with output IP3 up to +30.5 dBm. Operating from a +7V supply at 220 mA typical current, the amplifier is internally matched to 50 Ω at both the RF input and output ports. These features make it well-suited for wideband driver stages in RF/mmWave front ends, test and measurement instrumentation, electronic warfare, and general-purpose broadband gain block applications.
Features
- High Frequency Wideband Operation
- High Saturated Output Power, +24 dBm Typical
- Positive Gain Slope
- Low Noise Figure, 3.8 dB Typical
Applications
- SATCOM
- 5G transceivers
- Test and Measurement Equipment
Functional Block Diagram
Part Ordering Options
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-11078CH | 0.01 – 40 GHz High Frequency Distributed Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
| Part Number | Description | Package | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|
| AMM-11078CH | 0.01 – 40 GHz High Frequency Distributed Driver Amplifier | CH | REACH RoHS | Released | 3A001.b.2.d |
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Table Of Contents
- Device Overview
- Port Configuration and Functions
- Revision History
- Specifications
- Die Mounting Recommendations
- Operation
- Mechanical Data
Revision History
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2026-04-10 | Initial Release |
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Port Configuration and Functions
Port Functions
| Port | Function | Description | DC Equivalent Circuit |
|---|---|---|---|
| ACG1 | External Chip Capacitor | The ACG1 pad provides additional off chip bypass capacitance. A 0.1uF chip capacitor is recommended. |  |
| GND | Ground | Bottom side must be connected to a DC/RF ground potential with high thermal and electrical conductivity. |  |
| RF In | RF Input | This is the RF Input port of the amplifier die. It is RF matched to 50 Ω and requires a DC blocking capacitor. |  |
| RF Out | RF Output | The RF Out/ Vd pad supplies DC voltage to the drain of the amplifier and also acts as the RF output. This pad requires an external bias-tee. |  |
| Vg | Gate Bias Voltage Pad | The Vg pad is connected resistively on chip. The user should apply between -0.15V and -0.35V to Vg pad before applying positive DC voltage to any Vd port. Lower (more negative) voltages on a Vg pad will result in lower drain current and lower small signal gain. |  |
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Specifications
Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.) | 3 | W |
| Maximum Operating Temperature 1 | 85 | °C |
| Maximum Storage Temperature | 150 | °C |
| Max Junction Temperature for MTTF > 1E6 Hours | 175 | °C |
| Minimum Operating Temperature | -40 | °C |
| Minimum Storage Temperature | -65 | °C |
| Negative Bias Voltage (Vg) | -2 | V |
| Positive Drain Supply Current (Id) (with RF Input) | 250 | mA |
| Positive Drain Supply Voltage (Vd) | 12 | V |
| RF Input Power | 20 | dBm |
| Thermal Resistance, θJC | 15 | ºC/W |
[1] Low thermal resistance die attach to thermal ground is necessary for MTTF > 1x10^6 hours
Package Information
| Parameter | Details | Rating |
|---|---|---|
| ESD | < 250 Volts | HBM Class 0 |
| Dimensions | - | 1.38mm x 2.40mm |
Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Power Supply DC current should be modified by changing bias voltage Vg to maintain junction temperature within MTTF target for given operating conditions.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Power Supply DC Voltage (Vd) | 4 | 7 | 8 | V |
| Power Supply DC Current (Id) (No RF Input) | 150 | 220 | 230 | mA |
| Ambient Temperature | -40 | 25 | 85 | °C |
| Negative Bias Voltage (Vg) | -0.35 | -0.25 | -0.15 | V |
| Input Power for Saturation | 10 | 11 | 15 | dBm |
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Small Signal Gain | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 17.5 | - | dB |
| Input Return Loss | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 18 | - | dB |
| Output Return Loss | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 19 | - | dB |
| Reverse Isolation | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 55 | - | dB |
| Noise Figure | Vd = +7V, Id = 220mA | 0.01 | 40 | - | 3.8 | - | dB |
| Saturated Output Power | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 25 | - | dBm |
| Saturated Output Power | Vd = +7V, Id = 220mA | 15 | 30 | - | 23.8 | - | dBm |
| Saturated Output Power | Vd = +7V, Id = 220mA | 30 | 40 | - | 21.7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 15 | 30 | - | 7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 30 | 40 | - | 6 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 22 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 15 | 30 | - | 21.3 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 30 | 40 | - | 19.5 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 15 | - | 32.5 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 15 | 30 | - | 29 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 30 | 40 | - | 24 | - | dBm |
| Input IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 15 | - | dBm |
| Output IP2 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 38 | - | dBm |
| Input IP2 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 22.5 | - | dBm |
| Current Consumption | Vd= +7V | - | - | - | 220 | - | mA |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Small Signal Gain | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 17.5 | - | dB |
| Input Return Loss | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 18 | - | dB |
| Output Return Loss | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 19 | - | dB |
| Reverse Isolation | Vd = +7V, Id = 220mA, Pin = -20dBm | 0.01 | 40 | - | 55 | - | dB |
| Noise Figure | Vd = +7V, Id = 220mA | 0.01 | 40 | - | 3.8 | - | dB |
| Saturated Output Power | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 25 | - | dBm |
| Saturated Output Power | Vd = +7V, Id = 220mA | 15 | 30 | - | 23.8 | - | dBm |
| Saturated Output Power | Vd = +7V, Id = 220mA | 30 | 40 | - | 21.7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 15 | 30 | - | 7 | - | dBm |
| Input P1dB | Vd = +7V, Id = 220mA | 30 | 40 | - | 6 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 0.01 | 15 | - | 22 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 15 | 30 | - | 21.3 | - | dBm |
| Output P1dB | Vd = +7V, Id = 220mA | 30 | 40 | - | 19.5 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 15 | - | 32.5 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 15 | 30 | - | 29 | - | dBm |
| Output IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 30 | 40 | - | 24 | - | dBm |
| Input IP3 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 15 | - | dBm |
| Output IP2 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 38 | - | dBm |
| Input IP2 | Vd = +7V, Id = 220mA, Pin = -18dBm, 1MHz Tone Spacing | 0.01 | 40 | - | 22.5 | - | dBm |
| Current Consumption | Vd= +7V | - | - | - | 220 | - | mA |
Low frequency performance dependent on application circuit. For operation under 10MHz see application circuit notes.
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Typical Performance Plot
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AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
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AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Application Circuit
AMM-11078CH
0.01 – 40 GHz High Frequency Distributed Driver Amplifier
Mechanical Data
Outline Drawing
Download : Outline 2D Drawing
It is recommended to handle this die from the perimeter. Handling keep out zone is 100um inset from die perimeter.