AMM-11059CH_0.01 to 50 GHz, High Frequency Distributed Power Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-11059CH	0.01 to 50 GHz, High Frequency Distributed Power Amplifier	CH	RoHS REACH	Released	3A001.b.2.f

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-11059CH	0.01 to 50 GHz, High Frequency Distributed Power Amplifier	CH	RoHS REACH	Released	3A001.b.2.f

Revision History

Revision Code	Revision Date	Comment
-	2026-04-10	Initial Release

Port Configuration and Functions

Port Diagram

Diagram of the port configuration for AMM-11059CH

Port Functions

Port	Function	Description	DC Equivalent Circuit
CAP1	External Chip Capacitor	For normal operation an external bypass capacitor should be used at this port. See application circuit section.	-
RF In	RF Input	This is the RF Input port of the amplifier die. Port is internally matched to 50 Ω. External blocking capacitor is required for operation.
RF Out / Vd	RF Output and Positive Device Voltage Supply Port	This is the RF Output port and positive supply port of the amplifier die. Port is internally matched to 50 Ω. External bias tee is required for operation.
Vg	Gate Bias Voltage Pad	VG provides gate bias to the amplifier. For normal operation an external bypass capacitor should be used at this port. See application circuit section.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Drain Current (Id)	260	mA
Drain Supply Voltage (Vd)	14	V
Maximum Input Power	27	dBm
Maximum Operating Temperature ¹	85	°C
Minimum Operating Temperature	-40	°C
Thermal Resistance, θJC	10	ºC/W
Maximum Storage Temperature	150	°C
Minimum Storage Temperature	-65	°C
Negative Bias Voltage (Vg)	-2	V

^[1] Low thermal resistance die attach to thermal ground is necessary for MTTF > 1x10^6 hours.

Package Information

Parameter	Details	Rating
ESD	< 250 Volts	HBM Class 0
Dimensions	-	1.8 x 1.38 mm

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Drain Supply Voltage (Vd) (Amp)	6	12	12	V
Ambient Temperature	-40	25	85	°C
Gate Bias DC Voltage (Vg)	-	-0.4	-0.2	V
Positive DC Current (Id) (No RF Input)	148	220	230	mA

Sequencing Requirements Turn-on Procedure: Apply negative bias to Vg Apply Vd Turn-off Procedure: Turn off Vd Turn off Vg

Electrical Specifications

Unless otherwise specified, electrical specifications apply at ambient temperature of 25°C

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	Vd = 12V, Id = 225mA	0.01	50	-	12	-	dB
Saturated Output Power	Vd = 12V, Id = 225mA	0.01	10	-	27	-	dBm
Saturated Output Power	Vd = 12V, Id = 225mA	10	30	-	25	-	dBm
Saturated Output Power	Vd = 12V, Id = 225mA	30	50	-	22	-	dBm
Output IP3	Vd = 12V, Id = 225mA	0.01	15	-	35	-	dBm
Output IP3	Vd = 12V, Id = 225mA	15	50	-	30	-	dBm
Output IP2	Vd = 12V, Id = 225mA	0.01	50	-	35	-	dBm
Input Return Loss	Vd = 12V, Id = 225mA	0.01	50	-	20	-	dB
Noise Figure	Vd = 12V, Id = 225mA	0.01	50	-	7	-	dB
Output Return Loss	Vd = 12V, Id = 225mA	0.01	50	-	10	-	dB
Reverse Isolation	Vd = 12V, Id = 225mA	0.01	50	-	50	-	dB
Current Consumption	-	-	-	-	220	-	mA

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	Vd = 12V, Id = 225mA	0.01	50	-	12	-	dB
Saturated Output Power	Vd = 12V, Id = 225mA	0.01	10	-	27	-	dBm
Saturated Output Power	Vd = 12V, Id = 225mA	10	30	-	25	-	dBm
Saturated Output Power	Vd = 12V, Id = 225mA	30	50	-	22	-	dBm
Output IP3	Vd = 12V, Id = 225mA	0.01	15	-	35	-	dBm
Output IP3	Vd = 12V, Id = 225mA	15	50	-	30	-	dBm
Output IP2	Vd = 12V, Id = 225mA	0.01	50	-	35	-	dBm
Input Return Loss	Vd = 12V, Id = 225mA	0.01	50	-	20	-	dB
Noise Figure	Vd = 12V, Id = 225mA	0.01	50	-	7	-	dB
Output Return Loss	Vd = 12V, Id = 225mA	0.01	50	-	10	-	dB
Reverse Isolation	Vd = 12V, Id = 225mA	0.01	50	-	50	-	dB
Current Consumption	-	-	-	-	220	-	mA