Device Overview

General Description

The ADM-9181CH is a wideband distributed amplifier capable of providing 14.5 dB gain and +31 dBm OIP3 from 100MHz to 22 GHz. The ADM-9181CH is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. The amplifier has excellent return losses and gain flatness.

Photo of ADM-9181CH

Features

  • 14.5dB typical gain Gain
  • +31dBm typical OIP3
  • Flat gain response
  • Excellent return losses

Applications

  • Communication Systems
  • Test and Measurement Equipment
  • Satellite Communications
  • Electronic Warfare

Functional Block Diagram

Block Diagram

Part Ordering Options

Part NumberDescriptionPackageGreen StatusProduct LifecycleExport Classification
ADM-9181CHDC - 26 GHz Distributed AmplifierCH

RoHS

ReleasedEAR99

Table Of Contents

Revision History

Revision CodeRevision DateComment
-2024-08-29Initial Release

Rev: - | Copyright © 2024 Marki Microwave LLC.

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Port Configuration and Functions

Port Diagram

Diagram of the port configuration for ADM-9181CH

Rev: - | Copyright © 2024 Marki Microwave LLC.

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Port Functions

PortFunctionDescriptionDC Equivalent
Circuit
ACG1External Chip Capacitor The ACG1 pad provides additional off chip bypass capacitance. A 0.1uF chip capacitor is recommended.Equivalent circuit for the External Chip Capacitor
ACG2External Chip Capacitor The ACG2 pad provides additional off chip bypass capacitance. A 100pF chip capacitor is recommended.Equivalent circuit for the External Chip Capacitor
ACG3External Chip Capacitor The ACG3 pad provides additional off chip bypass capacitance. A 100pF chip capacitor is recommended.Equivalent circuit for the External Chip Capacitor
ACG4External Chip Capacitor The ACG4 pad provides additional off chip bypass capacitance. A 0.1uF chip capacitor is recommended.Equivalent circuit for the External Chip Capacitor
GNDGnd Gnd is provided through the backside of the die and should be connected to a DC/RF ground potential with high thermal and electrical conductivity.Equivalent circuit for the Gnd
RF InRF Input This is the amplifier’s RF Input port. It is RF matched to 50 Ω and requires a DC blocking capacitor.Equivalent circuit for the RF Input
RF Out / VdRF Out / Vd The RF Out/ Vd pad supplies DC voltage to the drain of the amplifier IC and also acts as the RF output. This pad requires an external bias-tee. Nominal voltage for Vd at this pad is +6V.Equivalent circuit for the RF Out / Vd
VbPositive bias The Vb pad provides a required positive bias which supplies an internal current mirror. A higher voltage results in higher current draw through the VD / RF Out port. This port should be set to +3V for normal operation.Equivalent circuit for the Positive bias

Rev: - | Copyright © 2024 Marki Microwave LLC.

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Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

ParameterMaximum RatingUnit
Bias Supply Voltage (Vb) 6.5V
Drain Current (Id) (No RF Applied) 250mA
Maximum Operating Temperature for MTTF > 1E6 hours 85°C
Maximum Storage Temperature 125°C
Minimum Operating Temperature for MTTF > 1E6 hours -40°C
Minimum Storage Temperature -65°C
Positive Drain Supply Voltage (Vd) 8V
RF Input Power 20dBm

Package Information

ParameterDetailsRating
Dimensions-2.3 x 1.5 mm

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

ParameterMinNominalMaxUnit
Positive DC Current (Id) (No RF Input) 82130190mA
Positive DC Bias Voltage (Vb) 234.4V
Ambient Temperature -402585°C
Positive DC Voltage (Vd) 456V

Rev: - | Copyright © 2024 Marki Microwave LLC.

5

Electrical Specifications

ParameterTest ConditionsMinimum
Frequency
(GHz)
Maximum
Frequency
(GHz)
MinTypMaxUnit
Input IP2 1Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 13-24-dBm
Input IP3 Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-17-dBm
Input Return Loss Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-19-dB
Noise Figure Vd = 6V, Vb = 3V, Pin = -20dBm
6 26-3.4-dB
Noise Figure Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 6-6-dB
Output IP2 2Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 13-38-dBm
Output IP3 Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-31-dBm
Output P1dB Vd = 6V, Vb = 3V
0.1 20-22-dBm
Output P1dB Vd = 6V, Vb = 3V
20 26-18.5-dBm
Output Return Loss Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-23-dB
Reverse Isolation Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-38-dB
Small Signal Gain Vd = 6V, Vb = 3V, Pin = -20dBm
0.1 26-14.5-dB

[1][2] IP2 is specified up to an input frequency of 13GHz where the IM2 product becomes attenuated by the frequency response of the amplifier.

Rev: - | Copyright © 2024 Marki Microwave LLC.

6

Typical Performance vs. Bias

Small Signal Gain (dB) graph for ADM-9181CH
P1dB (dBm) graph for ADM-9181CH
Input Return Loss (dB) vs. Frequency graph for ADM-9181CH
Output Return Loss (dB) graph for ADM-9181CH
Input IP3 (dBm) vs. Frequency, over Bias graph for ADM-9181CH
OIP3 (dBm) graph for ADM-9181CH
Input IP2 (dBm) vs. Frequency, over Bias graph for ADM-9181CH
Output IP2 (dBm) vs. Frequency, over Bias graph for ADM-9181CH

Rev: - | Copyright © 2024 Marki Microwave LLC.

7

Noise Figure (dB) graph for ADM-9181CH
Reverse Isolation (dB) graph for ADM-9181CH

Rev: - | Copyright © 2024 Marki Microwave LLC.

8

Application Circuit

Application Circuit for ADM-9181CH

Rev: - | Copyright © 2024 Marki Microwave LLC.

9

Mechanical Data

Outline Drawing

Download : Outline 2D Drawing

Outline Drawing

Notes:

  1. CH substrate is 0.004 thick GaAs.
  2. I/O trace is 5 microns and ground plane is 4 microns Au.
  3. Tolerance for X, Y dimensions is ± 0.002 in.
  4. Tolerance for Z dimensions is ± 0.0005 in.
  5. Tolerance for pad location is ± 0.0001 in.

Rev: - | Copyright © 2024 Marki Microwave LLC.

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Evaluation Board - Outline Drawing

Outline Drawing

Rev: - | Copyright © 2024 Marki Microwave LLC.

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