ADM-8558CH_DC - 20 GHz Distributed Amplifier

Part Number	Description	Package	Connectors	Green Status	Product Lifecycle	Export Classification
ADM-8558PC	0.005 - 20 GHz Distributed Amplifier	PC	Standard	RoHS REACH	Released	EAR99
ADM-8558CH	DC - 20 GHz Distributed Amplifier	CH	-	RoHS REACH	Released	EAR99

Part Number	Description	Package	Connectors	Green Status	Product Lifecycle	Export Classification
ADM-8558PC	0.005 - 20 GHz Distributed Amplifier	PC	Standard	RoHS REACH	Released	EAR99
ADM-8558CH	DC - 20 GHz Distributed Amplifier	CH	-	RoHS REACH	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2023-07-01	Datasheet Initial Release
A	2024-08-02	Updated according to ECN# 24031. Updated voltage limits, performance plots, application circuit and outline drawing.

Port Configuration and Functions

Port Diagram

Diagram of the port configuration for ADM-8558CH

Port Functions

Port	Function	Description
ACG1	External Chip Capacitor	The ACG1 pad provides additional off chip bypass capacitance. A 100pF chip capacitor is recommended.
ACG2	External Chip Capacitor	The ACG2 pad provides additional off chip bypass capacitance. A 0.1uF chip capacitor is recommended.
ACG3	External Chip Capacitor	The ACG3 pad provides additional off chip bypass capacitance. A 0.1uF chip capacitor is recommended.
ACG4	External Chip Capacitor	The ACG4 pad provides additional off chip bypass capacitance. A 100pF chip capacitor is recommended.
GND	Ground	Housing or ground lug must be connected to a DC/RF ground potential with high thermal and electrical conductivity.
RF In	RF Input	This is the amplifier’s RF Input port. It is RF matched to 50 Ω and requires an DC blocking capacitors
Vd/RF Out	Drain Supply / RF Output	The VD pin supplies DC voltage to the drain of the amplifier IC. This pin is nominally set at +6V.
Vg	Gate Bias Pin	The VG pad provides a required positive bias which supplies the current mirror. A higher voltage results in a higher current draw through the VD / RF Out port. This port should be set to +3V for normal operation.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device

Parameter	Maximum Rating	Unit
Drain Current (Id) (No RF Applied)	80	mA
Drain Supply Voltage (Vd)	8.5	V
Gate Current (Ig)	10	mA
Gate Supply Voltage (Vg)	6.5	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-55	°C
RF Power Handling	15	dBm

Package Information

Parameter	Details	Rating
Dimensions	-	1.75 x 2.3 mm

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ambient Temperature	-40	25	85	°C
Power Supply DC Voltage (Vd)	6	6	8	V
Power Supply DC Current (Id) (No RF Input)	50	50	70	mA
Gate Bias DC Voltage (Vg)	3	3	4	V

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd = 6V, Vg = 3V.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Saturated Output Power	-	2	24	-	19	-	dBm
Current Consumption	Vd = 6V, Vg = 3V, No RF input	0.004	20	-	50	-	mA
Input Return Loss	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	20	-	21	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	7	-	3.8	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	15	20	-	2.8	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	7	15	-	1.8	-	dB
Output IP3	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	23	-	dBm
Output P1dB	Vd = 6V, Vg = 3V	0.005	20	-	14	-	dBm
Output Return Loss	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	23	-	dB
Reverse Isolation	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	40	-	dB
Small Signal Gain	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	20	14	16	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Saturated Output Power	-	2	24	-	19	-	dBm
Current Consumption	Vd = 6V, Vg = 3V, No RF input	0.004	20	-	50	-	mA
Input Return Loss	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	20	-	21	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	7	-	3.8	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	15	20	-	2.8	-	dB
Noise Figure	Vd = 6V, Vg = 3V, Pin = -20dBm	7	15	-	1.8	-	dB
Output IP3	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	23	-	dBm
Output P1dB	Vd = 6V, Vg = 3V	0.005	20	-	14	-	dBm
Output Return Loss	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	23	-	dB
Reverse Isolation	Vd = 6V, Vg = 3V, Pin = -20dBm	0.004	20	-	40	-	dB
Small Signal Gain	Vd = 6V, Vg = 3V, Pin = -20dBm	0.005	20	14	16	-	dB

Typical Performance Plots

Small Signal Gain (dB) vs. Frequency, over Bias graph for ADM-8558CH

Output P1dB (dBm) vs. Frequency, over Bias graph for ADM-8558CH

Noise Figure (dB) vs. Frequency, over Bias graph for ADM-8558CH

Reverse Isolation (dB) vs. Frequency, over Bias graph for ADM-8558CH

Output IP3 (dBm) vs. Frequency, over Bias graph for ADM-8558CH

Input IP3 (dBm) vs. Frequency, over Bias graph for ADM-8558CH

Input Return Loss (dB) vs. Frequency, over Bias graph for ADM-8558CH

Output Return Loss (dB) vs. Frequency, over Bias graph for ADM-8558CH

ADM-8558PC - Typical Performance Plots

Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.