AMM-9858PSM_2 - 20 GHz Wideband Low Noise Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-9858PSM	2 - 20 GHz Wideband Low Noise Amplifier	QFN	RoHS REACH	Released	EAR99
EVB-AMM-9858P	Evaluation Board, AMM-9858PSM Wideband Low Noise Amplifier	-	REACH RoHS	Released	-

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-9858PSM	2 - 20 GHz Wideband Low Noise Amplifier	QFN	RoHS REACH	Released	EAR99
EVB-AMM-9858P	Evaluation Board, AMM-9858PSM Wideband Low Noise Amplifier	-	REACH RoHS	Released	-

Revision History

Revision Code	Revision Date	Comment
-	2025-03-10	Initial Release
A	2026-02-13	MTTF Table Added.

Port Configuration and Functions

Port Diagram

A port diagram of the AMM-9858PSM is shown below.

Diagram of the port configuration for AMM-9858PSM

Port Functions

Port	Function	Description	DC Equivalent Circuit
Paddle	Ground	DC and RF Ground are provided through the QFN paddle. The paddle should be attached to a DC/RF ground with high thermal and electrical conductivity.
Pin 11	Vd	This is the positive DC supply voltage for the amplifier IC. This pin is nominally set to +5V. This part requires an off-chip bypass capacitor of 0.1uF installed at this pin as close to the IC as possible. See applications circuit.
Pin 2	RF Input	This is the amplifiers RF input port. This port is internally matched to 50 Ohms and is internally DC shorted to GND. This pin may be left floating if no DC is present on the line but should be DC blocked otherwise.
Pin 5	Vg	This is the negative DC bias voltage for the amplifier IC. The voltage at this pin controls the current draw Id of the part. Higher voltage results in higher current. For normal operation, the voltage at this pin is adjusted to produce an Id of 76mA when Vd=5V. This part requires an off-chip bypass capacitor in series with a 10 Ohm resistor installed at this pin as close to the IC as possible. See applications circuit.
Pin 8	RF Output	This is the amplifiers RF output port. This port is internally matched to 50 Ohms and is internally DC shorted to GND. This pin may be left floating if no DC is present on the line but should be DC blocked otherwise.
Pins 1,3,4,6,7,9,10 and 12	Non-connect (NC)	These pins are not internally connected. Datasheet performance is measured with these pins connected to ground.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If any one of these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Drain Current (Id) (No RF Applied)	84	mA
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-65	°C
Negative Bias Voltage	-2	V
Positive Drain Supply Voltage (Vd)	8	V
RF Input Power	10	dBm

FIT and MTTF Table

T (°C)	λ (TIF)	MTTF (hr)	MTTF (yr)
105	2,441.45	4.10E+05	47
85	310.48	3.22E+06	368
55	8.79	1.14E+08	12,992
25	0.12	8.24E+09	941,063

Package Information

Parameter	Details	Rating
Dimensions	-	3 x 3 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Ambient Temperature	-40	25	85	°C
Negative Bias Voltage (Vg)	-0.5	-0.2	-0.2	V
Positive DC Voltage (Vd)	4	5	5	V
Positive DC Current (Id) (No RF Input)	32	76	76	mA

Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. QFNs are 100% RF tested.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	17.5	-	dB
Small Signal Gain	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	17.5	-	dB
Input Return Loss	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	14	-	dB
Input Return Loss	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	14	-	dB
Output Return Loss	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	14	-	dB
Output Return Loss	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	14	-	dB
Reverse Isolation	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	22	-	dB
Reverse Isolation	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	22	-	dB
Output IP3	5V/-0.2V bias, 20MHz tone spacing, Input Power = -10dBm	2	20	-	30	-	dBm
Output IP2	5V/-0.2 bias, 20MHz tone spacing, Input Power = -10dBm	2	20	-	37	-	dBm
Output P1dB	5V/-0.2V bias	2	20	-	18	-	dBm
Current Consumption ¹	5V/-0.2V bias, No RF Applied	-	-	-	76	-	mA
Saturated Output Power	-	2	15	-	21	-	dBm
Saturated Output Power	-	2	20	-	17	-	dBm
Noise Figure	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	1.9	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Small Signal Gain	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	17.5	-	dB
Small Signal Gain	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	17.5	-	dB
Input Return Loss	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	14	-	dB
Input Return Loss	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	14	-	dB
Output Return Loss	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	14	-	dB
Output Return Loss	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	14	-	dB
Reverse Isolation	25°C, Input Power = -20.00 dBm Input, Vd1=5, Vb1=-0.2, Id1=76	2	20	-	22	-	dB
Reverse Isolation	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	22	-	dB
Output IP3	5V/-0.2V bias, 20MHz tone spacing, Input Power = -10dBm	2	20	-	30	-	dBm
Output IP2	5V/-0.2 bias, 20MHz tone spacing, Input Power = -10dBm	2	20	-	37	-	dBm
Output P1dB	5V/-0.2V bias	2	20	-	18	-	dBm
Current Consumption ¹	5V/-0.2V bias, No RF Applied	-	-	-	76	-	mA
Saturated Output Power	-	2	15	-	21	-	dBm
Saturated Output Power	-	2	20	-	17	-	dBm
Noise Figure	Temp = 25°C, Input Power = -20.00 dBm, Vd1=5V, Vb1=-0.2V, Id1=76mA	2	20	-	1.9	-	dB