AMM-7200ASM_12-46 GHz GaAs Surface Mount LO Driver Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-7200ASM	12-46 GHz GaAs Surface Mount LO Driver Amplifier	QFN	REACH RoHS	Released	3A001.b.2.d

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-7200ASM	12-46 GHz GaAs Surface Mount LO Driver Amplifier	QFN	REACH RoHS	Released	3A001.b.2.d

Revision History

Revision Code	Revision Date	Comment
-	2025-03-19	Initial Release

Port Configuration and Functions

Port Diagram

A port diagram of the AMM-7200ASM’s QFN package is shown below.

Diagram of the port configuration for AMM-7200ASM

Port Functions

Port	Function	Description
GND	Ground	Ground paddle and non-connected pins must be connected to a DC/RF ground potential with high thermal and electrical conductivity, and low inductance.
Pin 11	RF Output	Pin 11 is the RF output of the amplifier, and is matched to 50 ohms. It is internally DC blocked.
Pin 14	Positive DC Supply Vd	Pins 14 provides +2.5V to +4V DC voltage to the amplifier’s third stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage.
Pin 15	Positive DC Supply Vd	Pins 15 provides +2.5V to +4V DC voltage to the amplifier’s second stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage.
Pin 16	Positive DC Supply Vd	Pins 16 provides +2.5V to +4V DC voltage to the amplifier’s first stage. Negative voltage must be supplied to Pin 6 before turning on the positive supply voltage.
Pin 2	RF Input	Pin 2 is the RF input of the amplifier, and is matched to 50 ohms. It is internally DC blocked.
Pin 6	Negative DC Supply Vg	Pin 6 provides -0.4V to -0.6V of DC voltage. This must be turned on before turning on the positive supply voltage to Pin 1.

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may be inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.

Parameter	Maximum Rating	Unit
Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.)	1	W
Maximum Operating Temperature	85	°C
Maximum Storage Temperature	150	°C
Max Junction Temperature for MTTF > 1E6 hours	175	°C
Minimum Operating Temperature	-40	°C
Minimum Storage Temperature	-65	°C
Negative Bias Voltage (Pin 6)	-2	V
Positive Drain Supply Current (with RF Input)	450	mA
Positive Drain Supply Voltage (Pin 14, 15, 16)	4.5	V
RF Input Power	20	dBm
Thermal Resistance, θJC	94	ºC/W

Package Information

Parameter	Details	Rating
Dimensions	-	3 x 3 mm
Moisture Sensitivity Level	-	MSL 1

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings .

Parameter	Min	Nominal	Max	Unit
Input Power for Saturation	6	9	12	dBm
Ambient Temperature	-40	25	85	°C
Power Supply DC Current ¹	115	180	300	mA
Gate Bias DC Voltage	-0.6	-0.5	-0.4	V
Power Supply DC Voltage	2.5	3	3	V

^[1] Power Supply DC current is specified as Id1 + Id2 + Id3

Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. QFNs are 100% RF tested.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Drain Current, Id ¹	3V/-0.4V	-	-	-	230	-	mA
Drain Current, Id ²	3V/-0.5V	-	-	-	180	-	mA
Drain Current, Id ³	3V/-0.6V	-	-	-	130	-	mA
Input Power for Saturation	3V/-0.5V bias	12	46	-	9	-	dBm
Input Return Loss	3V/-0.5V bias, -25 dBm Input Power	12	46	-	18	-	dB
Noise Figure	3V/-0.5V Bias	12	46	-	5.1	-	dB
Output IP3	3V/-0.5V bias, -20 dBm Input Power	12	46	-	29	-	dBm
Output Power ⁴	3V/-0.5V bias	12	22	-	20	-	dBm
Output Return Loss	3V/-0.5V bias, -25 dBm Input Power	12	46	-	14	-	dB
Reverse Isolation	3V/-0.5V bias, -25 dBm Input Power	12	46	-	52	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	38	46	-	16	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	12	18	-	17	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	18	38	-	20	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Drain Current, Id ¹	3V/-0.4V	-	-	-	230	-	mA
Drain Current, Id ²	3V/-0.5V	-	-	-	180	-	mA
Drain Current, Id ³	3V/-0.6V	-	-	-	130	-	mA
Input Power for Saturation	3V/-0.5V bias	12	46	-	9	-	dBm
Input Return Loss	3V/-0.5V bias, -25 dBm Input Power	12	46	-	18	-	dB
Noise Figure	3V/-0.5V Bias	12	46	-	5.1	-	dB
Output IP3	3V/-0.5V bias, -20 dBm Input Power	12	46	-	29	-	dBm
Output Power ⁴	3V/-0.5V bias	12	22	-	20	-	dBm
Output Return Loss	3V/-0.5V bias, -25 dBm Input Power	12	46	-	14	-	dB
Reverse Isolation	3V/-0.5V bias, -25 dBm Input Power	12	46	-	52	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	38	46	-	16	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	12	18	-	17	-	dB
Small Signal Gain	3V/-0.5V bias, -25 dBm Input Power	18	38	-	20	-	dB

^[1] Bias conditions for Id tested with no RF input power. See section 3.6 for DC current vs. RF power. Bias conditions presented as Vd/Vg. Drain current is specified as Id1 + Id2 + Id3

^[2]^[3] Bias conditions for Id tested with no RF input power. See section 3.6 for DC current vs. RF power. Bias conditions presented as Vd/Vg. Drain current is specified as Id1 + Id2 + Id3

^[4] Saturated output power specification defined using the EVAL-AMM-7200SM P5dB compression curve shown in section 3.6, with board losses mathematically extracted.