Port Diagram
A port diagram of the APM-6848PA is shown below.
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Device Overview
General Description
The APM-6848 is an integrated 2-stage broadband, low phase noise LO driver amplifier designed to provide a saturated +20 dBm output power from a 0-4 dBm input power with low DC power consumption. This amplifier uses GaAs HBT technology for low phase noise, and is optimized to provide enough power to drive the LO port of an S-diode mixer from 2 GHz to 20 GHz or of an H or L diode mixer from 2 GHz to 32 GHz. This amplifier can be operated with a variety of bias conditions for both low power and high-power applications.
Features
- -165 dBc/Hz phase noise at 10 kHz offset frequency
- +21 dBm output power
- +23 dB gain
- Low DC power consumption
- Positive-only biasing
- No sequencing required
- Unconditionally stable
- Integrated DC blocks – No bias-tees or off-chip blocking required
Applications
- Mobile test and measurement equipment
- Radar
- SATCOM
- 5G transceivers
- Driver amplifier for S, H, and L – diode mixers
- Suitable as a T3 driver
Functional Block Diagram
Part Ordering Options
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|---|
| APM-6848PA | 2-32 GHz GaAs Broadband Low Phase Noise Amplifier | PA | Standard | REACH RoHS | Obsolete | EAR99 |
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification |
|---|---|---|---|---|---|---|
| APM-6848PA | 2-32 GHz GaAs Broadband Low Phase Noise Amplifier | PA | Standard | REACH RoHS | Obsolete | EAR99 |
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Table Of Contents
- Device Overview
- Port Configuration and Functions
- Revision History
- Specifications
- Operation
- Mechanical Data
Revision History
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2019-10-01 | Datasheet Initial Release |
| A | 2020-01-01 | Revised Min. Psat/SSG Spec, Added Time Domain Plots |
| B | 2020-07-01 | Revised Max Operating Temperature |
| C | 2020-07-01 | Updated Thermal Resistance |
| D | 2020-10-01 | Updated Thermal Specs, Updated Min Specs |
| E | 2020-12-01 | Updated Performance Plots to Adhere to Max Input Power Spec |
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Port Configuration and Functions
Port Functions
| Port | Function | Connector Type | Description | DC Equivalent Circuit |
|---|---|---|---|---|
| GND | Ground | - | Housing or outside of the coaxial cables must be connected to a DC/RF ground potential with high thermal and electrical conductivity. |  |
| RF In | RF Input | 2.92F | This is the RF input port of the amplifier. It is internally DC blocked and RF matched to 50 Ω. |  |
| RF Out | RF Output | 2.92M | This is the RF output port of the amplifier. It is internally DC blocked and RF matched to 50 Ω. Must have less than 7:1 VSWR when operating with voltage larger than 5V on port VC. |  |
| VB | Base Supply | - | Port VB is the DC voltage supply port for current mirrors which controls the collector current supplied to the 2 amplifier stages. Larger voltages result in a higher current draw through port VC, effectively functioning as a gain control pin. The VB port in the PA module internally connects to both VB1 and VB2 of the IC described in Port Functions of this datasheet. |  |
| VC | Collector Supply | - | Port VC is the DC voltage supply port for both stages of the 2-stage amplifier. The VC port in the PA module internally connects to both VC1 and VC2 of the IC described in Port Functions of this datasheet. |  |
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Specifications
Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Collector Positive Bias Voltage (VC, VC1, VC2) | 7 | V |
| Current Mirror Positive Bias Current (Ib, Ib1+Ib2) | 8 | mA |
| Current Mirror Positive Bias Voltage (VB, VB1, VB2) | 7 | V |
| Maximum Operating Temperature | 85 | °C |
| Maximum Storage Temperature | 150 | °C |
| Max Junction Temperature for MTTF >1E6 Hours | 125 | °C |
| Minimum Operating Temperature | -40 | °C |
| Minimum Storage Temperature | -65 | °C |
| Output Load VSWR | 7 | - |
| Positive Bias Current (Ic1) 1 | 90 | mA |
| Positive Bias Current (Ic2) 2 | 90 | mA |
| RF Input Power | 5 | dBm |
| θJC, Junction to Case Thermal Resistance | 53 | ºC/W |
[1][2] Maximum positive DC collector current into each collector biasing pin.
Package Information
| Parameter | Details | Rating |
|---|---|---|
| Weight | Package name: PA | 14.7g |
| Dimensions | - | 28.45 x 14.99 mm |
Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Ambient Temperature | -40 | 25 | 85 | °C |
| Positive DC Voltage (VC1) | 3 | 5 | 6 | V |
| Positive DC Current (Ic1) | 8 | 21 | 40 | mA |
| Positive DC Voltage (VC2) | 3 | 5 | 6 | V |
| Positive DC Current (Ic2) | 8 | 21 | 40 | mA |
| Positive DC Current Mirror Voltage (VB1) | 3 | 5 | 6 | V |
| Positive DC Current Mirror Current (Ib1) | 0.9 | 2 | 2.6 | mA |
| Positive DC Current Mirror Voltage (VB2) | 3 | 5 | 6 | V |
| Positive DC Current Mirror Voltage (Ib2) | 0.9 | 2 | 2.6 | mA |
Maximum recommended operating current conditions without RF input applied. Please see typical performance plots on page 12 for relationship between RF input power and DC current draw.
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis. All Specifications and performance shown with VC1 = VC2 and VB1 = VB2.
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 5V/4V | - | - | - | 27 | - | mA |
| Current Consumption 2 | 5V/5V | - | - | - | 43 | - | mA |
| Current Consumption 3 | 5V/6V | - | - | - | 67 | - | mA |
| Current Mirror, Ib | 5V/4V | - | - | - | 2.9 | - | mA |
| Current Mirror, Ib | 5V/5V | - | - | - | 4 | - | mA |
| Current Mirror, Ib | 5V/6V | - | - | - | 5.2 | - | mA |
| Input IP3 | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 0.5 | - | dBm |
| Input Power for Saturation | 5V/5V bias | 2 | 29 | - | 4 | - | dBm |
| Input Return Loss | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 9 | - | dB |
| Input Return Loss | 5V/5V bias, -25 dBm Input Power | 2 | 20 | - | 11 | - | dB |
| Noise Figure | 5V/5V bias, -25 dBm Input Power | 2 | 26.5 | - | 6 | - | dB |
| Output IP3 | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 21 | - | dBm |
| Output P1dB | 5V/5V bias | 2 | 20 | - | 19 | - | dBm |
| Output P1dB | 5V/5V bias | 20 | 29 | - | 13 | - | dBm |
| Output Return Loss | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 7 | - | dB |
| Output Return Loss | 5V/5V bias, -25 dBm Input Power | 2 | 20 | - | 15 | - | dB |
| Phase Noise @ 10 kHz Offset | 5V/5V bias, +9 dBm Input power | 4 | 4 | - | -165 | - | dBc/Hz |
| Reverse Isolation | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 65 | - | dB |
| Saturated Output Power | 5V/5V bias, +4 dBm Input Power | 20 | 29 | - | 18 | - | dBm |
| Saturated Output Power | 5V/5V bias, +4 dBm Input Power | 2 | 20 | 19 | 21 | - | dBm |
| Small Signal Gain | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 21 | - | dB |
| Small Signal Gain | 5V/5V bias, -25 dBm Input Power
| 2 | 20 | 19 | 23 | - | dB |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 5V/4V | - | - | - | 27 | - | mA |
| Current Consumption 2 | 5V/5V | - | - | - | 43 | - | mA |
| Current Consumption 3 | 5V/6V | - | - | - | 67 | - | mA |
| Current Mirror, Ib | 5V/4V | - | - | - | 2.9 | - | mA |
| Current Mirror, Ib | 5V/5V | - | - | - | 4 | - | mA |
| Current Mirror, Ib | 5V/6V | - | - | - | 5.2 | - | mA |
| Input IP3 | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 0.5 | - | dBm |
| Input Power for Saturation | 5V/5V bias | 2 | 29 | - | 4 | - | dBm |
| Input Return Loss | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 9 | - | dB |
| Input Return Loss | 5V/5V bias, -25 dBm Input Power | 2 | 20 | - | 11 | - | dB |
| Noise Figure | 5V/5V bias, -25 dBm Input Power | 2 | 26.5 | - | 6 | - | dB |
| Output IP3 | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 21 | - | dBm |
| Output P1dB | 5V/5V bias | 2 | 20 | - | 19 | - | dBm |
| Output P1dB | 5V/5V bias | 20 | 29 | - | 13 | - | dBm |
| Output Return Loss | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 7 | - | dB |
| Output Return Loss | 5V/5V bias, -25 dBm Input Power | 2 | 20 | - | 15 | - | dB |
| Phase Noise @ 10 kHz Offset | 5V/5V bias, +9 dBm Input power | 4 | 4 | - | -165 | - | dBc/Hz |
| Reverse Isolation | 5V/5V bias, -25 dBm Input Power | 2 | 29 | - | 65 | - | dB |
| Saturated Output Power | 5V/5V bias, +4 dBm Input Power | 20 | 29 | - | 18 | - | dBm |
| Saturated Output Power | 5V/5V bias, +4 dBm Input Power | 2 | 20 | 19 | 21 | - | dBm |
| Small Signal Gain | 5V/5V bias, -25 dBm Input Power | 20 | 29 | - | 21 | - | dB |
| Small Signal Gain | 5V/5V bias, -25 dBm Input Power
| 2 | 20 | 19 | 23 | - | dB |
[1][2][3] Bias conditions for Ic and Ib tested with no RF input power. See Typical Performance Plots for DC current vs. RF power. Bias conditions presented as VC/VB.
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Typical Performance Plots
Phase Noise Plots taken above maximum recommended input power for MTTF >1E6 hours. Input powers greater than +5dBm can result in MTTF <1E6 hours.
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
Time Domain Plots
Fast rise time is desirable for linear T3 mixer operation.
APM-6848PA
2-32 GHz GaAs Broadband Low Phase Noise Amplifier
