AMM-9024CH_DC- 70GHz, Broadband Distributed Amplifier

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-9024CH	DC- 70GHz, Broadband Distributed Amplifier	CH	REACH RoHS	Released	3A001.b.2.d

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
AMM-9024CH	DC- 70GHz, Broadband Distributed Amplifier	CH	REACH RoHS	Released	3A001.b.2.d

Revision History

Revision Code	Revision Date	Comment
-	2024-02-01	Initial Datasheet Release
A	2024-10-03	Absolute Maximum RF Input Power limit increased to +20dBm.

Port Configuration and Functions

Port Diagram

The port diagram of the AMM-9024CH is shown below.

Diagram of the port configuration for AMM-9024CH

Port Functions

Port	Function	Description	Equivalent Circuit for Package
ACG1	AC Ground	This pad should be attached to an off-chip bypass capacitor. The recommended bypassing for this pad is 0.1uF. Do not ground this pad.	-
ACG3	AC Ground	This pad should be attached to an off-chip bypass capacitor. The recommended bypassing for this pad is 0.1uF. Do not ground this pad.	-
ACG4	AC Ground	This pad should be attached to an off-chip bypass capacitor. The recommended bypassing for this pad is 0.1uF. Do not ground this pad.	-
GND	Ground	Bottom side of the die must be connected to a DC/RF ground with high thermal and electrical conductivity. There is no need to bond to the Gnd pads on the top of the die.
RF In	RF Input	The amplifier’s RF Input pad, this pad requires an external blocking capacitor as shown in the application schematic. This pad is internally matched to 50 Ohms.
RF Out	RF Output	The amplifier’s RF Output pad, this pad requires an external blocking capacitor as shown in the application schematic. This pad is internally matched to 50 Ohms.
VDD/ACG2	Drain Supply Voltage	This pad provides DC power to the drain of the amplifier. DC voltage at this pin should be set to 5V for normal operation.
VGG1	Gate Bias Voltage	This pad provides DC bias to the gate of the amplifier. This pin requires a negative bias voltage for normal operation. The drain current Id of the amplifier will be controlled by the voltage applied to this pin. As this voltage becomes more positive, drain current will increase. For normal operation, the voltage on this pin should be set to produce a drain current of 45mA.
VGG2	AC Ground	This pad should be attached to an off-chip bypass capacitors. The recommended bypassing for this pad is a 0.1uF+100pF. Do not ground this pad.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Drain Supply Voltage (Vd)	7	V
Gate Supply Voltage (Vg)	-1.5	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-65	°C
Positive Drain Supply Current (Id) (with RF Input)	70	mA
RF Input Power	20	dBm

Package Information

Parameter	Details	Rating
Dimensions	-	1.35 x 1.2 mm

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Positive DC Current (Id) (No RF Input) ¹	-	45	-	mA
Input Power for Saturation	-	5	-	dBm
Gate Bias DC Voltage (Vg)	-	-0.25	-	V
Positive DC Voltage (Vd)	-	5	-	V

^[1] Recommended operating current condition without RF input applied.

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Vd = 5V and Vg set such that Id = 45mA.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Input Power for Saturation	Vd=5V, Id=45mA (No RF applied)	0	60	-	5	-	dBm
Input Return Loss	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	20	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	1	10	-	4	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	10	30	-	2.5	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	30	50	-	3	-	dB
Output P1dB	Vd=5V, Id=45mA (No RF applied)	30	60	-	8	-	dBm
Output P1dB	Vd=5V, Id=45mA (No RF applied)	0	30	-	11	-	dBm
Output Power	Vd=5V, Id=45mA (No RF applied)	0	30	12	14	-	dBm
Output Power	Vd=5V, Id=45mA (No RF applied)	30	60	8	11	-	dBm
Output Return Loss	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	20	-	dB
Reverse Isolation	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	40	-	dB
Small Signal Gain	Vd=5V, Id=45mA, Pin=-20dBm	0	60	10	11.5	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Input Power for Saturation	Vd=5V, Id=45mA (No RF applied)	0	60	-	5	-	dBm
Input Return Loss	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	20	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	1	10	-	4	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	10	30	-	2.5	-	dB
Noise Figure	Vd=5V, Id=45mA, Pin=-20dBm	30	50	-	3	-	dB
Output P1dB	Vd=5V, Id=45mA (No RF applied)	30	60	-	8	-	dBm
Output P1dB	Vd=5V, Id=45mA (No RF applied)	0	30	-	11	-	dBm
Output Power	Vd=5V, Id=45mA (No RF applied)	0	30	12	14	-	dBm
Output Power	Vd=5V, Id=45mA (No RF applied)	30	60	8	11	-	dBm
Output Return Loss	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	20	-	dB
Reverse Isolation	Vd=5V, Id=45mA, Pin=-20dBm	0	60	-	40	-	dB
Small Signal Gain	Vd=5V, Id=45mA, Pin=-20dBm	0	60	10	11.5	-	dB