Port Diagram
A port diagram of the AMM-7210CH is shown below.
END OF LIFE
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Device Overview
General Description
The AMM-7210 is a general-purpose broadband MMIC driver amplifier that provides +21 dBm output power suitable for driving a Marki H or L diode mixer at 22-57 GHz and S diode mixer from 25 50 GHz. The small die size allows it to be used in a variety of applications, and has built in DC-blocking capacitors on the input and output.
Features
- +21 dBm Output Power
- Broadband Performance
- Small Die size
Applications
- Mobile test and measurement equipment
- Radar and satellite communications
- 5G Transceivers
- Driver amplifier L,H,S – diode mixers
Functional Block Diagram
Part Ordering Options
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification | Recommended Replacement |
|---|---|---|---|---|---|---|---|
| AMM-7210UC | 22 GHz – 57 GHz GaAs Driver Amplifier | UC | Standard | REACH RoHS | Not Recommended for New Design | EAR99 | - |
| AMM-7210CH | 22 GHz – 57 GHz GaAs Driver Amplifier | CH | - | REACH RoHS | End of Life | 3A001.b.2.d | AMM-7210ACH |
| Part Number | Description | Package | Connectors | Green Status | Product Lifecycle | Export Classification | Recommended Replacement |
|---|---|---|---|---|---|---|---|
| AMM-7210UC | 22 GHz – 57 GHz GaAs Driver Amplifier | UC | Standard | REACH RoHS | Not Recommended for New Design | EAR99 | - |
| AMM-7210CH | 22 GHz – 57 GHz GaAs Driver Amplifier | CH | - | REACH RoHS | End of Life | 3A001.b.2.d | AMM-7210ACH |
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Table Of Contents
- Device Overview
- Port Configuration and Functions
- Revision History
- Specifications
- Operation
- Mechanical Data
Revision History
| Revision Code | Revision Date | Comment |
|---|---|---|
| - | 2021-05-01 | Datasheet Initial Release |
| A | 2026-03-17 | End of Life |
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Port Configuration and Functions
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Port Functions
| Port | Function | Description | DC Equivalent Circuit |
|---|---|---|---|
| GND | Ground | Bottom side must be connected to a DC/RF ground potential with high thermal and electrical conductivity. |  |
| RF In | RF Input | This is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF input pad is GSG with 175 µm pitch. |  |
| RF Out | RF Output | This is the RF Output port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF output pad is GSG with 175 µm pitch. |  |
| Vd1 | Drain Supply Port 1 | Pad Vd 1 supplies drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. |  |
| Vd2 | Drain Supply Port 2 | Pad Vd 2 supplies drain voltage to the second stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. |  |
| Vd3 | Drain Supply Port 3 | Pad Vd 3 supplies drain voltage to the third stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. |  |
| Vg | Gate Bias Voltage Pad | The Vg pad is connected resistively on chip. The user should apply between 0.4V and -0.6V to Vg pad before applying positive DC voltage to any Vd port. Lower (more negative) voltages on a Vg pad will result in lower drain current and lower small signal gain. |  |
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Specifications
Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.
| Parameter | Maximum Rating | Unit |
|---|---|---|
| Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.) 1 | 1 | W |
| Maximum Operating Temperature | 85 | °C |
| Maximum Storage Temperature | 150 | °C |
| Max Junction Temperature for MTTF > 1E6 Hours | 175 | °C |
| Minimum Operating Temperature | -40 | °C |
| Minimum Storage Temperature | -65 | °C |
| Negative Bias Voltage (Vg) | -2 | V |
| Positive Drain Supply Current (Id) (with RF Input) | 450 | mA |
| Positive Drain Supply Voltage (Vd) | 4.5 | V |
| RF Input Power | 20 | dBm |
| Thermal Resistance, θJC | 90 | ºC/W |
[1] Derates by 11 mW/ ˚C above 85 ˚C case temperature.
Package Information
| Parameter | Details | Rating |
|---|---|---|
| Dimensions | - | 1.38 x 1.17 mm |
Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.
| Parameter | Min | Nominal | Max | Unit |
|---|---|---|---|---|
| Ambient Temperature | -40 | 25 | 85 | °C |
| Power Supply DC Voltage (Vd) | 2.5 | 3 | 4 | V |
| Negative Bias Voltage (Vg) | -0.6 | -0.5 | -0.4 | dBm |
| Input Power for Saturation | 8 | 11 | 13 | dBm |
| Power Supply DC Current (Id) (No RF Input) | 115 | 180 | 300 | mA |
Power Supply DC current should be modified by changing bias voltage Vg to maintain junction temperature within MTTF target for given operating conditions.
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 3V/-0.4V | - | - | - | 230 | - | mA |
| Current Consumption 2 | 3V/-0.5V | - | - | - | 180 | - | mA |
| Current Consumption 3 | 3V/-0.6V | - | - | - | 130 | - | mA |
| Input IP3 | 3V/-0.5V, -20 dBm Input Power | 22 | 57 | - | 13 | - | dBm |
| Input Power for Saturation | 3V/-0.5V bias | 22 | 57 | - | 11 | - | dBm |
| Input Return Loss | 3V/-0.5V Bias | 22 | 57 | - | 14 | - | dB |
| Noise Figure | 3V/-0.5V Bias | 22 | 57 | - | 6.3 | - | dB |
| Output IP3 | 3V/-0.5V, -20 dBm Input Power | 22 | 57 | - | 27 | - | dBm |
| Output P1dB | 3V/-0.5V bias | 22 | 57 | - | 19 | - | dBm |
| Output Return Loss | 3V/-0.5V Bias | 22 | 57 | - | 14 | - | dB |
| Reverse Isolation | 3V/-0.5V Bias | 22 | 57 | - | 47 | - | dB |
| Saturated Output Power 4 | 3V/-0.5V bias | 48 | 57 | - | 18 | - | dBm |
| Saturated Output Power 5 | 3V/-0.5V bias | 22 | 30 | - | 19 | - | dBm |
| Saturated Output Power 6 | 3V/-0.5V bias | 30 | 48 | 17 | 20.5 | - | dBm |
| Small Signal Gain | 3V/-0.5V bias | 45 | 57 | - | 11 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 30 | 48 | 10 | 14.5 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 22 | 30 | - | 13 | - | dB |
| Parameter | Test Conditions | Minimum Frequency (GHz) | Maximum Frequency (GHz) | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Current Consumption 1 | 3V/-0.4V | - | - | - | 230 | - | mA |
| Current Consumption 2 | 3V/-0.5V | - | - | - | 180 | - | mA |
| Current Consumption 3 | 3V/-0.6V | - | - | - | 130 | - | mA |
| Input IP3 | 3V/-0.5V, -20 dBm Input Power | 22 | 57 | - | 13 | - | dBm |
| Input Power for Saturation | 3V/-0.5V bias | 22 | 57 | - | 11 | - | dBm |
| Input Return Loss | 3V/-0.5V Bias | 22 | 57 | - | 14 | - | dB |
| Noise Figure | 3V/-0.5V Bias | 22 | 57 | - | 6.3 | - | dB |
| Output IP3 | 3V/-0.5V, -20 dBm Input Power | 22 | 57 | - | 27 | - | dBm |
| Output P1dB | 3V/-0.5V bias | 22 | 57 | - | 19 | - | dBm |
| Output Return Loss | 3V/-0.5V Bias | 22 | 57 | - | 14 | - | dB |
| Reverse Isolation | 3V/-0.5V Bias | 22 | 57 | - | 47 | - | dB |
| Saturated Output Power 4 | 3V/-0.5V bias | 48 | 57 | - | 18 | - | dBm |
| Saturated Output Power 5 | 3V/-0.5V bias | 22 | 30 | - | 19 | - | dBm |
| Saturated Output Power 6 | 3V/-0.5V bias | 30 | 48 | 17 | 20.5 | - | dBm |
| Small Signal Gain | 3V/-0.5V bias | 45 | 57 | - | 11 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 30 | 48 | 10 | 14.5 | - | dB |
| Small Signal Gain | 3V/-0.5V bias | 22 | 30 | - | 13 | - | dB |
[1][2][3] Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.
[4][5][6] Saturated Output Power specification defined using the AMM-7210UC P5dB compression curve shown in section 3.7.
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Typical Performance Plots
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
AMM-7210UC - Typical Performance Plots
Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.
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AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
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AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
AMM-7210UC - Typical Marki Mixer Performance Plots with AMM-7210UC LO Driver
LO Input Powers specified as the input power into the AMM-7210UC LO driver
Performance plots for the connectorized module are shown for measurements where directly probed measurements of the die are unavailable. Note that the following measurements include losses from connectors and microstrip traces.
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
Application Circuit
AMM-7210CH
22 GHz – 57 GHz GaAs Driver Amplifier
