Device Overview

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General Description

The AMM-7200ACH is a general-purpose broadband MMIC driver amplifier that provides +20 dBm output power suitable for driving a Marki H or L diode mixer at 12-46 GHz and S diode mixer from 14-40 GHz with low current consumption. The amplifier also has excellent return losses and a small die size which allows it to be used in a variety of applications. It has built in DC-blocking capacitors on the input and output.

Photo of AMM-7200ACH

Features

  • +20 dBm Output Power
  • 18 dB gain
  • Excellent Return Losses
  • Small Die size

Applications

  • Mobile test and measurement equipment
  • Radar
  • SATCOM
  • 5G transceivers
  • Driver amplifier L,H,S – diode mixers

Functional Block Diagram

Block Diagram

Part Ordering Options

Part Number Description Package Green Status Product Lifecycle Export Classification
AMM-7200ACH 12 GHz – 46 GHz GaAs Driver Amplifier CH

REACH

RoHS

 Released 3A001.b.2.d

Table Of Contents

Revision History

Revision Code Revision Date Comment
- 2024-09-10 Initial Release

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Port Configuration and Functions

Port Diagram

A port diagram of the AMM-7200ACH is shown below.

Diagram of the port configuration for AMM-7200ACH

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Port Functions

Port Function Description Equivalent Circuit
for Package
GND Ground Ground is provided through the backside of the die. The backside of the die must be connected to a DC/RF ground with high thermal and electrical conductivity. Equivalent circuit for the Ground undefined
RF In RF Input This is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF input pad is GSG with 175 µm pitch. Equivalent circuit for the RF Input undefined
RF Out RF Output This is the RF Output port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF output pad is GSG with 175 µm pitch. Equivalent circuit for the RF Output undefined
VD1 Drain Supply Voltage Pad VD1 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. Equivalent circuit for the Drain Supply Voltage undefined
VD2 Drain Supply Voltage Pad VD2 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. Equivalent circuit for the Drain Supply Voltage undefined
VD3 Drain Supply Voltage Pad VD3 supplies the drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage to VG pins before applying drain voltage. Equivalent circuit for the Drain Supply Voltage undefined
VG1 Gate Supply Voltage VG1 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG1 pad before applying any VD drain supply. Equivalent circuit for the Gate Supply Voltage undefined
VG2 Gate Supply Voltage VG2 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG2 pad before applying any VD drain supply. Equivalent circuit for the Gate Supply Voltage undefined
VG3 Gate Supply Voltage VG3 provides gate bias to the first stage of the 3-stage amplifier. The user should apply between -0.4 and -0.6V to VG3 pad before applying any VD drain supply. Equivalent circuit for the Gate Supply Voltage undefined

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. This amplifier is designed and characterized in a 50Ω system, and operation in a reflective environment can cause performance degradation.

Parameter Maximum Rating Unit
Continuous Power Dissipation (PDISS) (at 85 ˚C case temp.) 1 W
Maximum Operating Temperature 85 °C
Maximum Storage Temperature 150 °C
Max Junction Temperature for MTTF > 1E6 Hours 175 °C
Minimum Operating Temperature -40 °C
Minimum Storage Temperature -65 °C
Negative Bias Voltage (Vg) -2 V
Positive Drain Supply Current (Id) (with RF Input) 450 mA
Positive Drain Supply Voltage (Vd) 4.5 V
RF Input Power 20 dBm
Thermal Resistance, θJC 90 ºC/W

Package Information

Parameter Details Rating
Dimensions - 1.38 x 1.25 mm

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Power Supply DC current should be modified by changing bias voltage Vg to maintain junction temperature within MTTF target for given operating conditions.

Parameter Min Nominal Max Unit
Input Power for Saturation 6 9 12 dBm
Power Supply DC Current (Id) (No RF Input) 100 150 210 mA
Power Supply DC Voltage (Vd) 2.5 3 3 V
Negative Bias Voltage (Vg) -0.6 -0.5 -0.4 V
Ambient Temperature -40 25 85 °C

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis

Parameter Test Conditions Minimum
Frequency
(GHz)		 Maximum
Frequency
(GHz)		 Min Typ Max Unit
Bias Requirements 1 3V/-0.4V
 - - - 200 - mA
Bias Requirements 2 3V/-0.5V
 - - - 150 - mA
Bias Requirements 3 3V/-0.6V
 - - - 100 - mA
Input IP3 3V/-0.5V, -20 dBm Input Power
 12 46 - 12 - dBm
Input Power for Saturation 3V/-0.5V bias
 12 46 - 9 - dBm
Input Return Loss 3V/-0.5V Bias
 12 46 - 19 - dB
Noise Figure 3V/-0.5V bias
 12 46 - 5.9 - dB
Output IP3 3V/-0.5V, -20 dBm Input Power
 12 46 - 29 - dBm
Output P1dB 3V/-0.5V bias
 12 46 - 19 - dBm
Output Power 4 3V/-0.5V bias
 35 46 - 18.5 - dBm
Output Power 5 3V/-0.5V bias
 12 18 - 18 - dBm
Output Power 6 3V/-0.5V bias
 18 35 17 20.5 - dBm
Output Return Loss 3V/-0.5V Bias
 12 46 - 18 - dB
Reverse Isolation 3V/-0.5V Bias
 12 46 - 60 - dB
Small Signal Gain 3V/-0.5V bias
 12 18 - 17 - dB
Small Signal Gain 3V/-0.5V bias
 18 35 14 18 - dB
Small Signal Gain 3V/-0.5V bias
 35 46 - 15 - dB

[1][2][3] Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.

[4][5][6] Saturated Output Power specification defined using the AMM-7200UC.

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Typical Performance Plots

Small Signal Gain (dB) vs. Frequency, Vd = 3V graph for AMM-7200ACH
Output P1dB vs Frequency and Bias graph for AMM-7200ACH
Input Return Loss (dB) vs. Frequency, Vd = 3V graph for AMM-7200ACH
Output Return Loss (dB) vs. Frequency, Vd = 3V graph for AMM-7200ACH
OIP3 (dBm) graph for AMM-7200ACH
Noise Figure (dB) vs. Frequency graph for AMM-7200ACH
Output Compression Curves (dBm) graph for AMM-7200ACH
Reverse Isolation (dB) vs. Frequency, Vd = 3V graph for AMM-7200ACH

Rev: - | Copyright © 2024 Marki Microwave Inc.

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Drain Current (mA) vs. RF Input Power, 3V/-0.5V Bias graph for AMM-7200ACH

Rev: - | Copyright © 2024 Marki Microwave Inc.

6647

Application Circuit

Application Circuit for AMM-7200ACH

Rev: - | Copyright © 2024 Marki Microwave Inc.

6648

Mechanical Data

Outline Drawing

Download : Outline 2D Drawing

Outline Drawing

Notes:

1. CH substrate is .002 Thick GaAs.
2. I/O traces finish is 4 microns Au. Ground plane finish is 5 microns Au.
3. Tolerance for X, Y dimensions is ± 0.002 in.
Tolerance for Z dimension is ± 0.0005 in.
Tolerance for pad location is ± 0.0001 in.

Rev: - | Copyright © 2024 Marki Microwave Inc.

6649