ADM-8095CH_0.09 - 10 GHz High Dynamic Range Gain Block

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8095CH	0.09 - 10 GHz High Dynamic Range Gain Block	CH	REACH RoHS	Released	EAR99

Part Number	Description	Package	Green Status	Product Lifecycle	Export Classification
ADM-8095CH	0.09 - 10 GHz High Dynamic Range Gain Block	CH	REACH RoHS	Released	EAR99

Revision History

Revision Code	Revision Date	Comment
-	2023-12-13	Initial Datasheet Release
A	2024-02-27	Updated RF Input Power Handling

Port Configuration and Functions

Port Diagram

A port diagram of the ADM-8095CH is shown below.

Diagram of the port configuration for ADM-8095CH

Port Functions

Port	Function	Description	DC Equivalent Circuit
IN	RF Input	The amplifier’s RF Input pad, this pad requires and external blocking capacitor and external stability network as shown in the application schematic.
OUT / VD	Drain Supply / RF Output	This pad is the RF Output port and is also the Vd port providing the main power supply to the amplifier. This pad is DC coupled and requires an external bias-T or discrete choke and DC blocking capacitor. This port is RF matched to 50 Ω. DC voltage at this pin should be set to 5V for normal operation.
Paddle	Ground	GND is provided through the backside of the die.
VB1	Non-connect (NC)	This pad should not be connected.	-
VB2	Positive bias	This pad provides DC bias to the amplifier. Placement of an external series bias resistor allows this pad to be supplied by the same supply line providing 5V to the RF Out/Vd pad For normal operation at 5V Vd, the recommended series bias resistor value is 3.3kΩ. Device drain current will change proportional to the current flowing into this pin. RF performance can be balanced with DC power consumption by adjusting this current.
VG2	Non-connect (NC)	This pad should not be connected.	-

Specifications

Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Reliability limits are individual, instantaneous catastrophic limits only. Functional operation limits are indicated below. Operation of the device at multiple absolute maximum limits or for extended periods at a single limit can cause degradation and damage to the device.

Parameter	Maximum Rating	Unit
Bias Voltage (Vb) ¹	4	V
Drain Current (RF Applied)	90	mA
Drain Supply Voltage (Vd) ²	8	V
Maximum Operating Temperature for MTTF > 1E6 hours	85	°C
Maximum Storage Temperature	125	°C
Max Junction Temperature for MTTF of 1E6 hours	175	°C
Max Power Dissipation for MTTF of 1E6 hours	0.26	W
Minimum Operating Temperature for MTTF > 1E6 hours	-40	°C
Minimum Storage Temperature	-65	°C
RF Input Power	20	dBm

^[1] Voltage applied to the VB2 pad of the part.

^[2] Voltage applied to the OUT pad of the part.

Package Information

Parameter	Details	Rating
Dimensions	-	1.05 x 1.05 mm

Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications. Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the Electrical Specifications. For limits, above which damage may occur, see Absolute Maximum Ratings.

Parameter	Min	Nominal	Max	Unit
Power Supply DC Current (Id) (No RF Input) ¹	21	39	47	mA
Power Supply DC Voltage (Vd)	3	5	6	V
Ambient Temperature	-40	25	85	°C
Input Power for Saturation	2	4	6	-

^[1] Recommended operating current conditions without RF input applied.

Electrical Specifications

Unless otherwise specified, electrical specifications apply at TA=+25°C, Rb=3.3k, Vd = 5V, and Vb = 5 V.

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Output IP2	Vd, Vb = 5V, Pin = -15 dBm per tone, 10 MHz tone spacing	6	10	-	30	-	dBm
Output IP2	Vd,Vb = 5V, Pin = -15dBm per tone, 10 MHz tone spacing	0.09	6	-	33	-	dBm
Current Consumption	Vd,Vb = 5 V, no RF input	-	-	-	39	-	mA
Input IP3	Vd,Vb = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	10	-	14	-	dBm
Input Power for Saturation	Vd,Vb = 5V	0.09	10	-	4	-	dBm
Input Return Loss	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	17	-	dB
Noise Figure	Vd,Vb = 5 V, Pin = -20 dBm	0.2	5	-	1.2	-	dB
Noise Figure	Vd,Vb = 5 V, Pin = -20 dBm	5	10	-	1.5	-	dB
Output IP3	Vd,Vb = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	10	-	30	-	dBm
Output P1dB	Vd,Vb = 5V	0.09	10	-	18	-	dBm
Output Return Loss	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	21	-	dB
Reverse Isolation	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	23	-	dB
Saturated Output Power	Vd,Vb = 5 V	0.09	10	-	21	-	dBm
Small Signal Gain	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	18	-	dB

Parameter	Test Conditions	Minimum Frequency (GHz)	Maximum Frequency (GHz)	Min	Typ	Max	Unit
Output IP2	Vd, Vb = 5V, Pin = -15 dBm per tone, 10 MHz tone spacing	6	10	-	30	-	dBm
Output IP2	Vd,Vb = 5V, Pin = -15dBm per tone, 10 MHz tone spacing	0.09	6	-	33	-	dBm
Current Consumption	Vd,Vb = 5 V, no RF input	-	-	-	39	-	mA
Input IP3	Vd,Vb = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	10	-	14	-	dBm
Input Power for Saturation	Vd,Vb = 5V	0.09	10	-	4	-	dBm
Input Return Loss	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	17	-	dB
Noise Figure	Vd,Vb = 5 V, Pin = -20 dBm	0.2	5	-	1.2	-	dB
Noise Figure	Vd,Vb = 5 V, Pin = -20 dBm	5	10	-	1.5	-	dB
Output IP3	Vd,Vb = 5 V, Pin = -15 dBm per tone, 10 MHz tone spacing	0.09	10	-	30	-	dBm
Output P1dB	Vd,Vb = 5V	0.09	10	-	18	-	dBm
Output Return Loss	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	21	-	dB
Reverse Isolation	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	23	-	dB
Saturated Output Power	Vd,Vb = 5 V	0.09	10	-	21	-	dBm
Small Signal Gain	Vd,Vb = 5 V, Pin = -20 dBm	0.09	10	-	18	-	dB